In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomica...In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.展开更多
The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that ...The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.展开更多
We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice ...We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.展开更多
目的:探讨艾灸血浆对乙醇损伤的人胃粘膜上皮细胞(GES-1)热休克蛋白70(HSP70)及细胞凋亡、细胞周期的影响。方法:24名健康人(男女各半)随机分为艾灸穴位组12名、艾灸非穴位组12名。两组分别于艾灸前和艾灸后采取静脉血提取灸前血浆和灸...目的:探讨艾灸血浆对乙醇损伤的人胃粘膜上皮细胞(GES-1)热休克蛋白70(HSP70)及细胞凋亡、细胞周期的影响。方法:24名健康人(男女各半)随机分为艾灸穴位组12名、艾灸非穴位组12名。两组分别于艾灸前和艾灸后采取静脉血提取灸前血浆和灸后血浆。将GES-1细胞分为A空白组、B模型组、C艾灸穴位血浆组、D艾灸非穴位血浆组,采用含8%乙醇的培养液造成GES-1细胞损伤模型,观察艾灸血浆对GES-1 HSP 70及细胞凋亡、细胞周期的影响。结果:与模型组和艾灸非穴位血浆组比较,艾灸穴位血浆组GES-1中HSP70含量明显上调(1.1084±0.0771 vs 0.6387±0.0322,0.7220±0.0708,P<0.01)、细胞凋亡率下降(1.238±0.084 vs7.418±0.156,1.565±0.186,P<0.01);细胞周期中G1期下降:49.18±1.72 vs 57.9±1.42,52.5±2.83,P<0.01);S期上升(25.93±1.18 vs 21.5±0.35,23.55±1.54,P<0.01);G2/M期升高(24.88±1.17 vs 20.53±1.24,23.95±1.58,P<0.01)。结论:艾灸血浆可诱导GES-1中HSP70含量升高,以达到对抗细胞凋亡,促进细胞增殖的作用。展开更多
We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesse...We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.展开更多
基金supported by the National Basic Research Program of China(Grant No.2011CBA00601)the National Natural Science Foundation of China(Grant Nos.60625403,60806033,and 60925015)
文摘In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.
基金supported by the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)
文摘The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.
文摘We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.
文摘目的:探讨艾灸血浆对乙醇损伤的人胃粘膜上皮细胞(GES-1)热休克蛋白70(HSP70)及细胞凋亡、细胞周期的影响。方法:24名健康人(男女各半)随机分为艾灸穴位组12名、艾灸非穴位组12名。两组分别于艾灸前和艾灸后采取静脉血提取灸前血浆和灸后血浆。将GES-1细胞分为A空白组、B模型组、C艾灸穴位血浆组、D艾灸非穴位血浆组,采用含8%乙醇的培养液造成GES-1细胞损伤模型,观察艾灸血浆对GES-1 HSP 70及细胞凋亡、细胞周期的影响。结果:与模型组和艾灸非穴位血浆组比较,艾灸穴位血浆组GES-1中HSP70含量明显上调(1.1084±0.0771 vs 0.6387±0.0322,0.7220±0.0708,P<0.01)、细胞凋亡率下降(1.238±0.084 vs7.418±0.156,1.565±0.186,P<0.01);细胞周期中G1期下降:49.18±1.72 vs 57.9±1.42,52.5±2.83,P<0.01);S期上升(25.93±1.18 vs 21.5±0.35,23.55±1.54,P<0.01);G2/M期升高(24.88±1.17 vs 20.53±1.24,23.95±1.58,P<0.01)。结论:艾灸血浆可诱导GES-1中HSP70含量升高,以达到对抗细胞凋亡,促进细胞增殖的作用。
文摘We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.
