The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that ...The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)
文摘The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.
