On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2...On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.展开更多
In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomica...In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.展开更多
由于其高容量、快速锂离子扩散速率和高电导性的优点,锗被认为是一种非常有前景的锂离子电池负极材料.本研究利用GeO2和石墨作为前驱体,通过水热法制备Ge/GeO_2/多层石墨复合物并将其应用于锂离子电池负极材料进行电化学性能研究.实验...由于其高容量、快速锂离子扩散速率和高电导性的优点,锗被认为是一种非常有前景的锂离子电池负极材料.本研究利用GeO2和石墨作为前驱体,通过水热法制备Ge/GeO_2/多层石墨复合物并将其应用于锂离子电池负极材料进行电化学性能研究.实验结果表明,Ge/GeO2纳米粒子的粒径约为40 nm.该复合物电极的第一次充放电容量分别是2045和1146 mA h g.1,库仑效率为56.0%.50圈充放电循环后,当电压范围为0.01~1.50 V时,容量保持在1008 mAhg^(-1).倍率实验表明,该电极在1C(1C=1000mAg^(-1))和2 C倍率大电流下,虽然容量略有衰减,但仍保持790和710 mAhg^(-1)的高容量.展开更多
An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respe...An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.展开更多
基金The author would like to thank Prof.Akira Toriumi,Prof.Kita Koji,Prof.Kosuke Nagashio,and Dr.Tomonori Nishimura at the University of Tokyo for their continuous support and encouragement,which induced the main results reviewed in this paper.
文摘On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.
基金supported by the National Basic Research Program of China(Grant No.2011CBA00601)the National Natural Science Foundation of China(Grant Nos.60625403,60806033,and 60925015)
文摘In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.
文摘由于其高容量、快速锂离子扩散速率和高电导性的优点,锗被认为是一种非常有前景的锂离子电池负极材料.本研究利用GeO2和石墨作为前驱体,通过水热法制备Ge/GeO_2/多层石墨复合物并将其应用于锂离子电池负极材料进行电化学性能研究.实验结果表明,Ge/GeO2纳米粒子的粒径约为40 nm.该复合物电极的第一次充放电容量分别是2045和1146 mA h g.1,库仑效率为56.0%.50圈充放电循环后,当电压范围为0.01~1.50 V时,容量保持在1008 mAhg^(-1).倍率实验表明,该电极在1C(1C=1000mAg^(-1))和2 C倍率大电流下,虽然容量略有衰减,但仍保持790和710 mAhg^(-1)的高容量.
基金Project supported by the National Natural Science Foundation of China(Nos.51262017,51362017)
文摘An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.
