The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectros...The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)...High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)and 7500cm^(2)/V.s(77K)have been obtained for heterostructures with x=0.3.The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.展开更多
Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical pr...Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures.Face-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°C.As the growth temperature increases to1050°C,the<110>preferred orientation of the Si film is observed.The Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μm.The electrical properties are greatly influenced by the grain structures.The Si film with<110>orientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.展开更多
Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High ...Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.展开更多
基金Founded by the National Key Research and Development Program(No.2021YFB3802400)the National Natural Science Foundation of China(No.52161037)the Basic Research Project of Yunnan Province(No.202001AU070112)。
文摘The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)and 7500cm^(2)/V.s(77K)have been obtained for heterostructures with x=0.3.The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.
基金Supported by the National Key Research and Development Program of China(2018YFB2200500)the National Natural Science Foundation of China(51402230,51177134,21503153)+1 种基金Natural Science Basic Research Plan in Shaanxi Province of China(2017JM6075,2015JM6282)Scientific Research Program Funded by Shaanxi Provincial Education Department(17JK0335)。
文摘Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures.Face-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°C.As the growth temperature increases to1050°C,the<110>preferred orientation of the Si film is observed.The Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μm.The electrical properties are greatly influenced by the grain structures.The Si film with<110>orientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.
基金the National High Technology and Research Development Program(863 Program)of China(No.2002AA321230)partially supported by the National Natural Sciences Foundation of China(No.10075072)
文摘Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.
