In this study,a micro in-plane p-type thermoelectric generator(TEG),which consists of thin-film Si_(1-x-y)Ge_(x)Sn_(y) ternary alloy semiconductor on insulator,is developed to make efficient use of waste heat such as ...In this study,a micro in-plane p-type thermoelectric generator(TEG),which consists of thin-film Si_(1-x-y)Ge_(x)Sn_(y) ternary alloy semiconductor on insulator,is developed to make efficient use of waste heat such as human body.A power factor value as high as 1095 mWm^(-1) K^(-2) had been achieved using Bion implanted and short-term rapid thermal annealing(RTA)process.In addition,a measuring scheme for micro TEG without external load resistance was designed.In one measuring session,multiple parameters can be measured.The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K,and a cross-sectional power density has reached up to 0.58 mW/cm^(2),which is a superior value for wearable device.The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.展开更多
基金supported by PRESTO(Grant No.JPMJPR15R2)and CREST(Grant No.JPMJCR19Q5)from the JST in Japan,a research grant(Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development)from the MEXT in Japan,the National Natural Science Foundation of China(Grant Nos.51772056,51961011,52061009)+2 种基金National Key Research and Development Program of China(No.2017YFE0198000)Guangxi Natural Science Foundation of China(Grant No.2019GXNSFAA245039,2017 GXNSFFA198015)the open foundation of Guangxi Key laboratory of Processing for Nonferrous Metals and Featured Materials,Guangxi University(Grant No.2020GXYSOF11).
文摘In this study,a micro in-plane p-type thermoelectric generator(TEG),which consists of thin-film Si_(1-x-y)Ge_(x)Sn_(y) ternary alloy semiconductor on insulator,is developed to make efficient use of waste heat such as human body.A power factor value as high as 1095 mWm^(-1) K^(-2) had been achieved using Bion implanted and short-term rapid thermal annealing(RTA)process.In addition,a measuring scheme for micro TEG without external load resistance was designed.In one measuring session,multiple parameters can be measured.The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K,and a cross-sectional power density has reached up to 0.58 mW/cm^(2),which is a superior value for wearable device.The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.
