We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetect...We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.展开更多
The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of ...The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.展开更多
基金This work was supported by National Basic Research Program of China(No.2013CB632103)National Natural Science Foundation of China(Nos.61534005 and 61474081)Scientific Research Project of Fujian Provincial Department of Education(No.JA15651).
文摘We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.
文摘The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.
