Germanium-tin films with rather high Sn content （28.04% and 29.61%） are deposited directly on Si （100） and Si （111） substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on t...Germanium-tin films with rather high Sn content （28.04% and 29.61%） are deposited directly on Si （100） and Si （111） substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge1-xSnx films is investigated by x-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM）. The x-ray diffraction （XRD） is also performed to determine the crystallinities of the Ge1-xSnx films. The experimental results indicate that root mean square （RMS） values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional （3D） island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge1-xSnx/Si （111） has no obvious advantage over that of Ge1-xSnx/Si （100） and the selection of Si （111） substrate is an effective method to improve the surface morphologies of Ge1-xSnx films. We also find that more severe Sn surface segregation occurs in the Ge1-xSnx/Si （111） sample during annealing than in the Ge1-xSnx/Si （100） sample.展开更多
Bulk mechanical alloying （BMA） has been successfully applied to solid-state synthesis of p-type and n-type thermoelectric materials Mg2Si1-xSnx （x = 0, 0.2, 0.4, 0.6, 0.8, 1） from element-powders at the room tempe...Bulk mechanical alloying （BMA） has been successfully applied to solid-state synthesis of p-type and n-type thermoelectric materials Mg2Si1-xSnx （x = 0, 0.2, 0.4, 0.6, 0.8, 1） from element-powders at the room temperature in a relatively short time. The electrical conductivity, the Seebeck coefficient and the thermal conductivity of the Mg2Si1-xSnx are quite sensitive to the x-content. With the x-content rising, the electrical conductivity increases. When x = 0.6, it reaches the lowest and Mg2Si shows an n-type of semi-conducting However, when x = 0.2 and T 〉525 K, the Seebeck coefficient of the samples will change the opposite way. While x≥0.4, the samples present a p-type of semi-conducting. The figure of merit, Z of Mg2Si1-xSnx will be obtained in the range from 300 K to 700 K. When x = 0.6, Z proves to be higher than that of other samples at 300 K≤ T≤650 K.展开更多
通过合金化改性技术,Ge可由间接带隙半导体转变为直接带隙半导体.改性后的Ge半导体可同时应用于光子器件和电子器件,极具发展潜力.基于直接带隙Ge1-x Sn x半导体合金8带Kronig-Penny模型,重点研究了其导带有效状态密度、价带有效状态密...通过合金化改性技术,Ge可由间接带隙半导体转变为直接带隙半导体.改性后的Ge半导体可同时应用于光子器件和电子器件,极具发展潜力.基于直接带隙Ge1-x Sn x半导体合金8带Kronig-Penny模型,重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度,旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考.研究结果表明:直接带隙Ge1-x Sn x合金导带有效状态密度随着Sn组分x的增加而明显减小,价带有效状态密度几乎不随Sn组分变化.与体Ge半导体相比,直接带隙Ge1-x Sn x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级;直接带隙Ge1-x Sn x合金本征载流子浓度随着Sn组分的增加而增加,比体Ge半导体高一个数量级以上.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61474085 and 61704130)the Science Research Plan in Shaanxi Province,China(Grant No.2016GY-085)+1 种基金the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(Grant No.90109162905)the Fundamental Research Funds for the Central Universities,China(Grant No.61704130)
文摘Germanium-tin films with rather high Sn content （28.04% and 29.61%） are deposited directly on Si （100） and Si （111） substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge1-xSnx films is investigated by x-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM）. The x-ray diffraction （XRD） is also performed to determine the crystallinities of the Ge1-xSnx films. The experimental results indicate that root mean square （RMS） values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional （3D） island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge1-xSnx/Si （111） has no obvious advantage over that of Ge1-xSnx/Si （100） and the selection of Si （111） substrate is an effective method to improve the surface morphologies of Ge1-xSnx films. We also find that more severe Sn surface segregation occurs in the Ge1-xSnx/Si （111） sample during annealing than in the Ge1-xSnx/Si （100） sample.
基金National Natural Science Foundation of China (50504002)
文摘Bulk mechanical alloying （BMA） has been successfully applied to solid-state synthesis of p-type and n-type thermoelectric materials Mg2Si1-xSnx （x = 0, 0.2, 0.4, 0.6, 0.8, 1） from element-powders at the room temperature in a relatively short time. The electrical conductivity, the Seebeck coefficient and the thermal conductivity of the Mg2Si1-xSnx are quite sensitive to the x-content. With the x-content rising, the electrical conductivity increases. When x = 0.6, it reaches the lowest and Mg2Si shows an n-type of semi-conducting However, when x = 0.2 and T 〉525 K, the Seebeck coefficient of the samples will change the opposite way. While x≥0.4, the samples present a p-type of semi-conducting. The figure of merit, Z of Mg2Si1-xSnx will be obtained in the range from 300 K to 700 K. When x = 0.6, Z proves to be higher than that of other samples at 300 K≤ T≤650 K.
文摘通过合金化改性技术,Ge可由间接带隙半导体转变为直接带隙半导体.改性后的Ge半导体可同时应用于光子器件和电子器件,极具发展潜力.基于直接带隙Ge1-x Sn x半导体合金8带Kronig-Penny模型,重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度,旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考.研究结果表明:直接带隙Ge1-x Sn x合金导带有效状态密度随着Sn组分x的增加而明显减小,价带有效状态密度几乎不随Sn组分变化.与体Ge半导体相比,直接带隙Ge1-x Sn x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级;直接带隙Ge1-x Sn x合金本征载流子浓度随着Sn组分的增加而增加,比体Ge半导体高一个数量级以上.
