期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity
1
作者 赖淑妹 毛丹枫 +5 位作者 黄志伟 许怡红 陈松岩 李成 黄巍 汤丁亮 《Journal of Semiconductors》 EI CAS CSCD 2016年第9期51-56,共6页
Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium(Ge) surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected... Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium(Ge) surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected to N_2 plasma exposure. This is because the thin Ge Ox film formed on Ge by O_2 or Ar plasma is more hydrophilic than Ge Ox Ny formed by N_2 plasma treatment. A flat(RMS 〈 0:5 nm) Ge surface with high hydrophilicity(contact angle smaller than 3°) was achieved by O_2 plasma treatment, showing its promising application in Ge low-temperature direct wafer bonding. 展开更多
关键词 surface hydrophilicity contact angle plasma geo_xN_y geo_x
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部