Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium（Ge） surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected...Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium（Ge） surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected to N_2 plasma exposure. This is because the thin Ge Ox film formed on Ge by O_2 or Ar plasma is more hydrophilic than Ge Ox Ny formed by N_2 plasma treatment. A flat（RMS 〈 0：5 nm） Ge surface with high hydrophilicity（contact angle smaller than 3°） was achieved by O_2 plasma treatment, showing its promising application in Ge low-temperature direct wafer bonding.展开更多
基金Project supported by the Key Project of Natural Science Foundation of China(No.61534005)the National Science Foundation of China(No.61474081)+2 种基金the National Basic Research Program of China(No.2013CB632103)the Natural Science Foundation of Fujian Province(No.2015D020)the Science and Technology Project of Xiamen City(No.3502Z20154091)
文摘Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium（Ge） surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected to N_2 plasma exposure. This is because the thin Ge Ox film formed on Ge by O_2 or Ar plasma is more hydrophilic than Ge Ox Ny formed by N_2 plasma treatment. A flat（RMS 〈 0：5 nm） Ge surface with high hydrophilicity（contact angle smaller than 3°） was achieved by O_2 plasma treatment, showing its promising application in Ge low-temperature direct wafer bonding.
