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Microstructural Probing of (1-x) GeS_(2-x)Ga_2S_3 System Glasses By Raman Scattering 被引量:4
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作者 陶海征 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2005年第3期8-10,共3页
Roman scattering measurement of ( 1 - x ) GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with t... Roman scattering measurement of ( 1 - x ) GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced : the gradual enhancement of ethane- like structural units S3 Ge- GeS3 ( 250 cm ^- 1) and S3 Ga- GaS3 (270 cm ^- 1 ) and the appearance of charge imbalanced units [ Ga2 S2 ( S1/2 )4 ]^2- and [Ga( S1/2 )4 ]^- . And this change of structural aspect seems to give as a clue to understanding the cause of the increased rare-earth solubility. 展开更多
关键词 1 - x ges2-x Ga2S3 system glasses Raman microstructure
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放电等离子烧结Gd/Gd_5Si_2Ge_2复合材料磁热效应研究
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作者 曾宏 岳明 +1 位作者 陈海玲 张久兴 《材料科学与工艺》 EI CAS CSCD 北大核心 2008年第6期872-874,共3页
以高纯钆和Gd5Si2Ge2合金为原料,采用放电等离子烧结技术制备了两组元Gdx(Gd5Si2Ge2)1-x(x=0,0.33,0.5,0.7,1)层状复合磁制冷材料.通过自制的磁热效应测量仪器直接测量了复合材料在外加磁场1.5 T下的磁热效应(ΔTad).随着复合比例的变化... 以高纯钆和Gd5Si2Ge2合金为原料,采用放电等离子烧结技术制备了两组元Gdx(Gd5Si2Ge2)1-x(x=0,0.33,0.5,0.7,1)层状复合磁制冷材料.通过自制的磁热效应测量仪器直接测量了复合材料在外加磁场1.5 T下的磁热效应(ΔTad).随着复合比例的变化,材料的最大绝热温变(ΔTad)从x=0.3时的1.6 K增加到x=0.7时的2.0 K,而最大绝热温变峰的位置从286K变到了293 K.同时,与单组元的Gd5Si2Ge2合金相比,随着钆的含量增加时,复合材料的最大绝热温变峰变宽.当x=0.7时,层状复合磁制冷材料在外加磁场1.5 T下的最大绝热温变(ΔT)在260-310K范围里从1.1 K变到2.0 K,这种材料非常适合作为室温磁制冷材料. 展开更多
关键词 放电等离子烧结 Gdx(Gd5Si2ge2)1-x 复合材料 磁热效应 绝热温变(ΔTad)
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