GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering,and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope(AFM)and...GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering,and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope(AFM)and nanoindenter.Meanwhile,the mechanical properties of GeSb2Te4 films with oxygen impurity were also investigated.The results indicate that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness,which present good load-support capacity.Although the effect of oxygen impurity on the anti-compression properties of GeSb2Te4 films is not very significant as a whole,certain oxygen dosage can relax the internal stress,thereby the hardness of the films drops slightly.展开更多
基金Project(50475124)supported by the National Natural Science Foundation of ChinaProject(200330)supported by the Foundation for the National Excellent Doctoral Dissertation of ChinaProject(NCET-04-0515)supported by the New Century Excellent Talents in University,China
文摘GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering,and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope(AFM)and nanoindenter.Meanwhile,the mechanical properties of GeSb2Te4 films with oxygen impurity were also investigated.The results indicate that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness,which present good load-support capacity.Although the effect of oxygen impurity on the anti-compression properties of GeSb2Te4 films is not very significant as a whole,certain oxygen dosage can relax the internal stress,thereby the hardness of the films drops slightly.
