GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are s...GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate(Rd) goes up with increasing of Tw, but increasing rate of Rd declines when Tw≥1 550 ℃. High Tw is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds(Ge-H, Si-H, etc.) in the films. In the Tw range of 1 400-1 850 ℃, the maximum bandgap of the GeSi:H films is 1.39 eV at Tw =1 450 ℃ and the band gap decreases with Tw increasing when Tw≥1 450 ℃.展开更多
基金Supported by the National Key Research and Development Program of China(2018YFB1500400-2018YFB1500403)the National Natural Science Foundation of China(61741404,61464007)the Jiangxi Provincial Key Research and Development Foundation(2016BBH80043)
文摘GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate(Rd) goes up with increasing of Tw, but increasing rate of Rd declines when Tw≥1 550 ℃. High Tw is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds(Ge-H, Si-H, etc.) in the films. In the Tw range of 1 400-1 850 ℃, the maximum bandgap of the GeSi:H films is 1.39 eV at Tw =1 450 ℃ and the band gap decreases with Tw increasing when Tw≥1 450 ℃.
