Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si（100） substrate and directly on a Si（100） substrate by molecular beam epitaxy （MBE） at low temperature. In the case of the Ge buffer/Si（100） subs...Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si（100） substrate and directly on a Si（100） substrate by molecular beam epitaxy （MBE） at low temperature. In the case of the Ge buffer/Si（100） substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a Xmin value of 6.7% measured by channeling and random Rutherford baekscattering spectrometry （RBS）, and a surface root-mean-square （RMS） roughness of 1.568 nm obtained by atomic force microscopy （AFM）. In the case of the Si（100） substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction （XRD） and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.展开更多
An investigation of germanium-tin(GeSn) on silicon p–i–n photodetectors with a high-quality Ge0.94 Sn0.06 absorbing layer is reported. The Ge Sn photodetector reached a responsivity as high as 0.45 A/W at the wavele...An investigation of germanium-tin(GeSn) on silicon p–i–n photodetectors with a high-quality Ge0.94 Sn0.06 absorbing layer is reported. The Ge Sn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the Ge Sn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.展开更多
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415)the National Basic Research Program of China (Grant No. 2007CB613404)+1 种基金the National Natural Science Foundation of China (Grant Nos. 60906035 and 61036003)the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01)
文摘Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si（100） substrate and directly on a Si（100） substrate by molecular beam epitaxy （MBE） at low temperature. In the case of the Ge buffer/Si（100） substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a Xmin value of 6.7% measured by channeling and random Rutherford baekscattering spectrometry （RBS）, and a surface root-mean-square （RMS） roughness of 1.568 nm obtained by atomic force microscopy （AFM）. In the case of the Si（100） substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction （XRD） and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200500)the National Natural Science Foundation of China(Grant Nos.61675195,61934007,and 61974170)+1 种基金Opened Fund of the State Key Laboratory of Integrated Optoelectronics,China(Grant No.IOSKL2018KF17)Beijing Natural Science Foundation,China(Grant No.4162063)
文摘An investigation of germanium-tin(GeSn) on silicon p–i–n photodetectors with a high-quality Ge0.94 Sn0.06 absorbing layer is reported. The Ge Sn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the Ge Sn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.
