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Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes
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作者 高凡 李永庆 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第11期72-76,共5页
In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. He... In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. Here, based on finite element analysis, we show that for the non-Hall-bar shaped topological insulator samples, the measured four-point resistances can be substantially modified by the sample geometry, bulk and surface resistivities,and magnetic field. Geometry correction factors must be introduced for accurately converting the four-point resistances to the longitudinal resistivity and Hall resistivity. The magnetic field dependence of inhomogeneous current density distribution can lead to pronounced positive magnetoresistance and nonlinear Hall effect that would not exist in the samples of ideal Hall bar geometry. 展开更多
关键词 Influence of Device geometry on Transport Properties of Topological Insulator Microflakes
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