Protégeons l'environnement et sauvons la vie rurale

La Chines’est rapidement développée ces dernières années,elle est maintenant la deuxième puissance économique du monde.Nous pouvons en être fiers,mais,c’est loin d’être suffisant si

A Self-Linking Field Formalism

The Gauss-linking integral for disjoint oriented smooth closed curves is derived linking integrals from the Biot-Savart description of the magnetic field. DeTurck and Gluck extend this linking from 3-space R3 to SU (2) space of the unit 3-sphere and hyperbolic space in Minkowski R1,3. I herein extend Gauss-linking to self-linking and develop the concept of self-dual, which is then applied to gravitomagnetic dynamics. My purpose is to redefine Wheeler’s geon from unstable field structures based on the electromagnetic field to self-stabilized gravitomagnetic field structures.

Spatial risk assessment of opium poppy cultivation in Afghanistan: integrating environmental and socio-economic drivers

Recently the cultivation of opium poppy in Afghanistan reached unprecedented levels.It is agreed that the complex and coupled interactions of social,economic and environmental drivers are crucial for understanding the spatial and temporal dynamics of opium poppy cultivation in Afghanistan.In this context,we present an integrated risk concept,which considers environmental and socio-economic drivers of opium poppy cultivation.A set of spatially explicit indicators for the environmental suitability and socio-economic vulnerability was established and populated from a variety of databases.Subsequently,novel methods of modelling homogeneous and spatially explicit regions of opium poppy cultivation suitability,socio-economic vulnerability and risk are developed and applied.The risk assessment results demonstrate the complex nature of the illicit crops production in Afghanistan and prompt a more profound examination of the drivers of opium poppy cultivation in a spatial context.The study also confirms what has already been widely discussed in literature:that reasons for cultivation are spatially diverse and often distinct,meaning that any formulation of generalized explanations cannot be drawn without ignoring a more complex reality.Thus,an integrative spatial view of risk,which integrates the social dimension as well as environmental parameters,is required to better identify context-specific intervention measures.

Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

The interracial and electrical characteristics of Ge metal-oxide-semiconductor （MOS） devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment： a lower interface-state density at the midgap （1.64 × 1011 cm-2, eV- 1） and gate leakage current （9.32 × 10-5 A/cm2 at Vfb ＋ 1 V）, a small capacitance equivalent thickness （1.11nm） and a high k value （32）. X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx （x 〈 2） are formed on the Ge surface during NH3-plasma treatment than the NE-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NHa-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NHa-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge.