The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct...The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.展开更多
The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performa...The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.展开更多
The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory （CJP...The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory （CJPL）. The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P＋ electrode and the outside N＋ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P＋ and N＋ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments.展开更多
A study on cosmogenic activation in germanium was carried out to evaluate the cosmogenic background level of natural and ^(70)Ge depleted germanium detectors. The production rates of long-lived radionuclides were calc...A study on cosmogenic activation in germanium was carried out to evaluate the cosmogenic background level of natural and ^(70)Ge depleted germanium detectors. The production rates of long-lived radionuclides were calculated with Geant4 and CRY.Results were validated by comparing the simulated and experimental spectra of CDEX-1B detector. Based on the validated codes, the cosmogenic background level was predicted for further tonne-scale CDEX experiment. The suppression of cosmogenic background level could be achieved by underground germanium crystal growth and high-purity germanium detector fabrication to reach the sensitivity requirement for direct detection of dark matter. With the low cosmogenic background, new physics channels,such as solar neutrino research and neutrinoless double-beta decay experiments, were opened and the corresponding simulations and evaluations were carried out.展开更多
Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experime...Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experiments.We report the measurement of Compton scattering in low-momentum transfer by implementing a 10-g germanium detector bombarded by a^(137)Cs source with a radioactivity of 8.7 mCi and a scatter photon captured by a cylindrical NaI(Tl)detector.A fully relativistic impulse approximation combined with multi-configuration Dirac–Fock wavefunctions was evaluated,and the scattering function of Geant4 software was replaced by our calculation results.Our measurements show that the Livermore model with the modified scattering function in Geant4 is in good agreement with the experimental data.It is also revealed that atomic many-body effects significantly influence Compton scattering for low-momentum transfer(sub-keV energy transfer).展开更多
SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate...SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.展开更多
Radiation is considered one of the possible causes of cancer disease with natural background sources including cosmic, terrestrial and internal radiation. A number of cancer disease cases have been reported in Kargi w...Radiation is considered one of the possible causes of cancer disease with natural background sources including cosmic, terrestrial and internal radiation. A number of cancer disease cases have been reported in Kargi with their causes not properly documented. The present work characterized the radioactivity in soil and water, to find out possible causes of radiation in KARGI-KENYA by studying magnetic intensities, anomalous zones with depth to magnetic sources and delineating subsurface structures. A total of 117 soil and 14 water samples were collected from the entire area and analysed for radionuclides due to <sup>40</sup>K, <sup>232</sup>Th and <sup>226</sup>Ra. Measurement methods of proton magnetometer and gamma spectrometry employing a high purity germanium (HPGe) detector were employed basically to evaluate the magnetic survey and radiological hazard of radioactivities respectively. A total of 51 magnetic field measurements were taken on the eastern part of Kargi, a place suspected to have more concentration of radionuclides. The results showed that there could have been a fractionation during weathering period or metasomatic activity of the radioelements involvement. This study also reveals that the mining activities in the nearby study area could have affected the geologic formation causing more fracturing in rocks and pronounced subsurface structures as a result of mining that could have served as passage for leachates from pollutants as well as the level of radiation in the study area.展开更多
High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achiev...High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.展开更多
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203)the National Natural Science Foundation of China(No.11975162)the SPARK project of the research and innovation program of Sichuan University(No.2018SCUH0051)。
文摘The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.
基金supported by the National Natural Science Foundation of China Youth Fund(No.12005017)。
文摘The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.
基金Supported by National Natural Science Foundation of China(10935005,10945002,11275107,11175099)National Basic Research Program of China(973 Program)(2010CB833006)
文摘The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory （CJPL）. The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P＋ electrode and the outside N＋ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P＋ and N＋ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments.
基金supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0402200,and 2017YFA0402201)the National Science Fund for Distinguished Young Scholars(Grant No.11725522)+2 种基金the National Natural Science Foundation of China(Grant Nos.11475092,11475099,and 11675088)the National Basic Research Program of China(Grant No.2010CB833006)the Tsinghua University Initiative Scientific Research Program(Grant No.20151080354)
文摘A study on cosmogenic activation in germanium was carried out to evaluate the cosmogenic background level of natural and ^(70)Ge depleted germanium detectors. The production rates of long-lived radionuclides were calculated with Geant4 and CRY.Results were validated by comparing the simulated and experimental spectra of CDEX-1B detector. Based on the validated codes, the cosmogenic background level was predicted for further tonne-scale CDEX experiment. The suppression of cosmogenic background level could be achieved by underground germanium crystal growth and high-purity germanium detector fabrication to reach the sensitivity requirement for direct detection of dark matter. With the low cosmogenic background, new physics channels,such as solar neutrino research and neutrinoless double-beta decay experiments, were opened and the corresponding simulations and evaluations were carried out.
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203),the National Natural Science Foundation of China(Nos.11975159 and 11975162).
文摘Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experiments.We report the measurement of Compton scattering in low-momentum transfer by implementing a 10-g germanium detector bombarded by a^(137)Cs source with a radioactivity of 8.7 mCi and a scatter photon captured by a cylindrical NaI(Tl)detector.A fully relativistic impulse approximation combined with multi-configuration Dirac–Fock wavefunctions was evaluated,and the scattering function of Geant4 software was replaced by our calculation results.Our measurements show that the Livermore model with the modified scattering function in Geant4 is in good agreement with the experimental data.It is also revealed that atomic many-body effects significantly influence Compton scattering for low-momentum transfer(sub-keV energy transfer).
文摘SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.
文摘Radiation is considered one of the possible causes of cancer disease with natural background sources including cosmic, terrestrial and internal radiation. A number of cancer disease cases have been reported in Kargi with their causes not properly documented. The present work characterized the radioactivity in soil and water, to find out possible causes of radiation in KARGI-KENYA by studying magnetic intensities, anomalous zones with depth to magnetic sources and delineating subsurface structures. A total of 117 soil and 14 water samples were collected from the entire area and analysed for radionuclides due to <sup>40</sup>K, <sup>232</sup>Th and <sup>226</sup>Ra. Measurement methods of proton magnetometer and gamma spectrometry employing a high purity germanium (HPGe) detector were employed basically to evaluate the magnetic survey and radiological hazard of radioactivities respectively. A total of 51 magnetic field measurements were taken on the eastern part of Kargi, a place suspected to have more concentration of radionuclides. The results showed that there could have been a fractionation during weathering period or metasomatic activity of the radioelements involvement. This study also reveals that the mining activities in the nearby study area could have affected the geologic formation causing more fracturing in rocks and pronounced subsurface structures as a result of mining that could have served as passage for leachates from pollutants as well as the level of radiation in the study area.
基金supported by the National Natural Science Foundation of China(No.12005017).
文摘High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.
