Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and...Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns.Its main photoelectric properties are average NETD equivalent to 18.5 mK,non-uniformity equivalent to 7.5%,operability equivalent to 98.97%.The paper also studies the substrate-removal technique on Germanium-based chip,which improves the stability and reliability of detector.展开更多
文摘Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns.Its main photoelectric properties are average NETD equivalent to 18.5 mK,non-uniformity equivalent to 7.5%,operability equivalent to 98.97%.The paper also studies the substrate-removal technique on Germanium-based chip,which improves the stability and reliability of detector.
