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应变Si_(1-x)Ge_xpMOSFET反型沟道空穴低场迁移率模型 被引量:3
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作者 张雪锋 徐静平 +1 位作者 邹晓 张兰君 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第11期2000-2004,共5页
在考虑应变对SiGe合金能带结构参数影响的基础上,提出了一个半经验的应变Si1-xGex/Si pMOSFET反型沟道空穴迁移率模型.在该模型中,给出了迁移率随应变的变化,并且考虑了界面陷阱电荷对载流子的库仑散射作用.利用该模型对室温下空穴迁移... 在考虑应变对SiGe合金能带结构参数影响的基础上,提出了一个半经验的应变Si1-xGex/Si pMOSFET反型沟道空穴迁移率模型.在该模型中,给出了迁移率随应变的变化,并且考虑了界面陷阱电荷对载流子的库仑散射作用.利用该模型对室温下空穴迁移率随应变的变化及影响空穴迁移率的因素进行了分析讨论. 展开更多
关键词 P-MOSFET 应变Sil Gex 空穴迁移率
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Si_(1-x)Ge_x/Si多层异质外延结构的研究 被引量:2
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作者 郭林 李开成 +2 位作者 张静 刘道广 易强 《微电子学》 CAS CSCD 北大核心 2000年第4期217-220,共4页
对制作的 Si1-xGex/Si多层异质外延结构进行了研究。并对其做了反射高能电子衍射(RHEED)、X射线衍射(XRD)和扩展电阻(SR)等测量,给出了利用这种结构研制出的异质结双极晶体管(HBT)的输出特性曲线。
关键词 Si1-2Gex/Si 异质外延 异质结双极晶体管
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Rare Earths and Magnetic Refrigeration 被引量:20
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作者 Karl A Gschneidner Vitalij K Pecharsky 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第6期641-647,共7页
Magnetic refrigeration is a revolutionary, efficient, environmentally friendly cooling technology, which is on the threshold of commercialization. The magnetic rare earth materials are utilized as the magnetic refrige... Magnetic refrigeration is a revolutionary, efficient, environmentally friendly cooling technology, which is on the threshold of commercialization. The magnetic rare earth materials are utilized as the magnetic refrigerants in most cooling devices, and for many cooling application the Nd2Fe14B permanent magnets are employed as the source of the magnetic field. The status of the near room temperature magnetic cooling was reviewed. 展开更多
关键词 magnetic refrigeration magnetocaloric effect GADOLINIUM Gd5 Si1- x Gex 4 La Fe 13 - x Six Hy Nd2 Fe14 B permanent magnets active magnetic regenerator cycle rare earths
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Physically-based modeling for hole scattering rate in strained Si_(1-x) Ge_x/(100)Si
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作者 王斌 胡辉勇 +2 位作者 张鹤鸣 宋建军 张玉明 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第2期430-436,共7页
Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into accoun... Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%. 展开更多
关键词 strained Si1-x Gex biaxial stress hole scattering rate effective mass
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Ge 组分对应变 Si1-x Gex 沟道 P-MOSFET 电学特性影响 被引量:2
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作者 杨洲 王茺 +2 位作者 王洪涛 胡伟达 杨宇 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第7期547-552,共6页
利用二维数值模拟方法,研究了不同Ge组分应变Si1-xGex沟道p-MOSFET的电容-电压特性以及阈值电压的变化情况.计算结果表明:提高应变Si1-xGex沟道层中的Ge组分,器件亚阈值电流明显增大;栅电容在器件进入反型状态时产生显著变化;阈值电压... 利用二维数值模拟方法,研究了不同Ge组分应变Si1-xGex沟道p-MOSFET的电容-电压特性以及阈值电压的变化情况.计算结果表明:提高应变Si1-xGex沟道层中的Ge组分,器件亚阈值电流明显增大;栅电容在器件进入反型状态时产生显著变化;阈值电压的改变量与Ge组分基本成线性关系.通过改变Si1-xGex沟道的长度,并结合相关物理模型,在低电场情况下,沟道中的空穴迁移率与总电阻对沟道长度的微分成反比关系. 展开更多
关键词 应变Si1-x Gex 沟道 P-MOSFET 空穴迁移率 栅电容
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利用Keating模型计算Si(1-x))Gex及非晶硅的拉曼频移 被引量:3
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作者 段宝兴 杨银堂 《物理学报》 SCIE EI CAS CSCD 北大核心 2009年第10期7114-7118,共5页
利用Keating模型计算了Si(1-x)Gex合金中Si—Si,Ge—Ge和Si—Ge三种振动模态的拉曼频移,计算分别获得Ge浓度为0.1,0.5和0.9时,Si—Ge的振动拉曼频移分别为402.75,413.39和388.15cm-1,这些结果与文献的实验结果符合,证明了Keating模型建... 利用Keating模型计算了Si(1-x)Gex合金中Si—Si,Ge—Ge和Si—Ge三种振动模态的拉曼频移,计算分别获得Ge浓度为0.1,0.5和0.9时,Si—Ge的振动拉曼频移分别为402.75,413.39和388.15cm-1,这些结果与文献的实验结果符合,证明了Keating模型建立的关于原子振动模型是有效的,并可以利用拉伸压缩和相邻原子键之间弹性系数变化获得处于应变状态的拉曼光谱频率.利用Keating模型首次计算得到了非晶硅材料的单声子散射峰为477.029cm-1,与文献实验结果480.0cm-1相近,说明了非晶硅中原子的总体效果与晶体硅相比处于拉伸状态. 展开更多
关键词 Keating模型 拉曼光谱 Si(1-x)Gex 非晶硅
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The Modernity of the Ancient-Style Verse
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作者 YANG Zhiyi 《Frontiers of Literary Studies in China-Selected Publications from Chinese Universities》 2015年第4期551-580,共30页
This article explores the stylistic innovations in the Ancient-Style Verse (gutishi 古体诗), and particularly in the subgenre ofgexing 歌行, from the Late Qing to the 1930s and 1940s. It argues that the relative fre... This article explores the stylistic innovations in the Ancient-Style Verse (gutishi 古体诗), and particularly in the subgenre ofgexing 歌行, from the Late Qing to the 1930s and 1940s. It argues that the relative free prosody of the Ancient-Style allowed innovation disguised as restoration. Yet, instead of being the prelude to modem vernacular poetry, the innovations in this genre may have found an end in themselves--namely, creating a style of verse which showed a unique combination of modern elements and deliberate stylistic archaism. Its lyric archaism and innovation were formulated in dialectical terms, which have been frequently evoked in the reformative moments of the Chinese tradition. This paper examines the evolution of the new gexing style through the close reading of a few gexing poems by Huang Zunxian 黄道宪 (1848-1905), Liang Qichao 梁启超 (1873-1929), Lin Gengbai 林庚白 (1896-1941), and Liu Yazi 柳亚子 (1887-1958). Given the rise of vernacular poetry since 1917, the poems of Lin and Liu may be called the Classicist Verse, which represents the author's conscious choice to elaborate on the subject matter using a particular classical genre, when other modern genres are available. In the end, I will also discuss the gexing style verses by Li Sichun 李思纯 in the translation of multi-stanza European poetry, as a practice in accord to the indigenization agenda of the Critical Review magazine. 展开更多
关键词 Lyric Classicism Ancient-Style Verse modernity gexing HuangZunxian Liang Qichao Wang Lixi Lin Gengbai Liu Yazi
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GEX株式会社 日本水族宠物界的引路人
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《水族世界》 2010年第5期186-188,共3页
中国的水族爱好者,通过GEX底砂产品,知道了日本GEX这个品牌。但可能还不是很了解,
关键词 水族爱好者 日本 GEX 品牌 养鱼
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