The analytical expression for the complex amplitude of light reflected from a wedge-shaped thin film is derived. For plane wave incidence, a simple ray tracing approach is used to calculate Goos-Hanchen （GH） shifts;...The analytical expression for the complex amplitude of light reflected from a wedge-shaped thin film is derived. For plane wave incidence, a simple ray tracing approach is used to calculate Goos-Hanchen （GH） shifts; and for non-plane wave incidence, for example, a Gaussian beam, the angular spectrum approach of plane wave is used in simulation. The two approaches predict that a wedge-shaped thin film can produce large negative longitudinal GH shifts. Although the reflectivity is small near the condition of resonance, the large negative GH shifts can be more easily detected in comparison with the shift from a plane-parallel film in vacuum.展开更多
Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depe...Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.展开更多
基金supported by the National Natural Science Foundation of China under Grant No.60777005.
文摘The analytical expression for the complex amplitude of light reflected from a wedge-shaped thin film is derived. For plane wave incidence, a simple ray tracing approach is used to calculate Goos-Hanchen （GH） shifts; and for non-plane wave incidence, for example, a Gaussian beam, the angular spectrum approach of plane wave is used in simulation. The two approaches predict that a wedge-shaped thin film can produce large negative longitudinal GH shifts. Although the reflectivity is small near the condition of resonance, the large negative GH shifts can be more easily detected in comparison with the shift from a plane-parallel film in vacuum.
基金Project supported by the National Natural Science Foundation of China(Grant No.62164005).
文摘Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.
