Enhancing the Goos-Hänchen shift based on quasi-bound states in the continuum through material asymmetric dielectric compound gratings

Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Currently,symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry,but few cases are achieved by breaking the material symmetry.This paper proposes a dielectric compound grating to achieve a high Q factor and high-reflection symmetry-protectede QBIC resonance based on material asymmetry.Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to-980 times the resonance wavelength,and the maximum GH shift is located at the reflection peak with unity reflectance.This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.

Enhancement and control of the Goos-Hanchen shift by nonlinear surface plasmon resonance in graphene

The Goos-H？nchen（GH） shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration.It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate.Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.

Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots

We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.

Tunable enhanced spatial shifts of reflective beam on the surface of a twisted bilayer of hBN

We investigated Goos-Hänchen(GH)and Imbert-Fedorov(IF)shifts of a reflective beam on a twisted bilayer of hexagonal boron nitride(hBN),where a left circularly polarized beam was incident on the surface.Our results demonstrate that the twist angle between the two optical axes plays an important role in obtaining large shifts with a high reflectivity.The GH shift with 10λ_(0) is achieved,while the reflectivity is near 100%by tuning the twist angle.The maximum of the IF shift is found in the certain condition satisfied by the reflective coefficients,and the shift strongly depends on the twist angle between the optical axes of the two slabs.The spatial shifts obtained directly from the GH and IF shift definitions were provided,which indicate that the theoretical results from the stationary phase method are believable.These results may open up a new way for developing the nano-optical devices.

Investigation of the limit of lateral beam shifts on a symmetrical metal-cladding waveguide

This paper reports that Goos-Hǎnchen （GH） shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, hcr, above which negative shift is observed and, reversely, positive shift occurs. Both positive and negative GH shifts near the critical thickness do not vary dramatically and can achieve a maximum on the submillimeter scale, which is different from simulated results using the stationary-phase method. It also shows that this critical thickness, hcr, can be obtained at the position for zero reflectivity by setting the intrinsic damping to be the same as the radiative damping. The GH effects observed near the critical thickness are produced by extreme distortion of the reflected beam profiles, which limits the amplitude of the GH shift and, further, the sensitivity of the GH optical sensor based on the symmetrical metal-cladding waveguide.

Large negative Goos-H(a|¨)nchen shift from a wedge-shaped thin film

The analytical expression for the complex amplitude of light reflected from a wedge-shaped thin film is derived. For plane wave incidence, a simple ray tracing approach is used to calculate Goos-Hanchen （GH） shifts; and for non-plane wave incidence, for example, a Gaussian beam, the angular spectrum approach of plane wave is used in simulation. The two approaches predict that a wedge-shaped thin film can produce large negative longitudinal GH shifts. Although the reflectivity is small near the condition of resonance, the large negative GH shifts can be more easily detected in comparison with the shift from a plane-parallel film in vacuum.

Anisotropic and valley-resolved beamsplitter based on a tilted Dirac system

We investigate theoretically valley-resolved lateral shift of electrons traversing an n–p–n junction bulit on a typical tilted Dirac system(8-Pmmn borophene). A gauge-invariant formula on Goos–H?nchen(GH) shift of transmitted beams is derived, which holds for any anisotropic isoenergy surface. The tilt term brings valley dependence of relative position between the isoenergy surface in n region and that in the p region. Consequently, valley double refraction can occur at the n–p interface. The exiting positions of two valley-polarized beams depend on the incident angle and energy of incident beam and barrier parameters. Their spatial distance D can be enhanced to be ten to a hundred times larger than the barrier width. Due to tilting-induced high anisotropy of the isoenergy surface, D depends strongly on the barrier orientation. It is always zero when the junction is along the tilt direction of Dirac cones. Thus GH effect of transmitted beams in tilted Dirac systems can be utilized to design anisotropic and valleyresolved beam-splitter.