Introducing the stress distribution near grain boundaries to improve the dislocation pileup model for the Hall-Petch (H-P) relation, the continuous distribution of dislocations in the pileup could be solved by means o...Introducing the stress distribution near grain boundaries to improve the dislocation pileup model for the Hall-Petch (H-P) relation, the continuous distribution of dislocations in the pileup could be solved by means of Tschebysheff polynomials for the Hubert transformation. An analytical formula of the stress intensity factor for the dislocation pileup is obtained. The reverse H-P relation may be explained by the modified dislocation-pileup-model.展开更多
Molecular dynamics simulations of nanocrystalline Cu with average grain sizes of 3.1 nm, 6.2 nm, 12.4 nm and 18.6 nm under uniaxial strain and stress tension at strain rates of 10^8 s^-1, 10^9 S^-1 and 10^10 s^-1 are ...Molecular dynamics simulations of nanocrystalline Cu with average grain sizes of 3.1 nm, 6.2 nm, 12.4 nm and 18.6 nm under uniaxial strain and stress tension at strain rates of 10^8 s^-1, 10^9 S^-1 and 10^10 s^-1 are performed to study the combined grain size, strain rate and loading condition effects on mechanical properties. It is found that the strength of nanocrystalline Cu increases as grain size increases regardless of loading condition. Both the strength and ductility of nanocrystalline Cu increase with strain rate except that there is no monotonic relation between the strength and strain rate for specimens under uni- axial strain loading. Moreover, the strength and ductility of specimens under uniaxial strain loading are lower than those under uniaxial stress loading. The nucleation of voids at grain boundaries and their subsequent growth characterize the failure of specimens under uniaxial strain loading, while grain boundary sliding and necking dominate the failure of specimens under uniaxial stress loading. The rate dependent strength is mainly caused by the dynamic wave effect that limits dislocation motion, while combined twinning and slipping mechanism makes the material more ductile at higher strain rates.展开更多
文摘Introducing the stress distribution near grain boundaries to improve the dislocation pileup model for the Hall-Petch (H-P) relation, the continuous distribution of dislocations in the pileup could be solved by means of Tschebysheff polynomials for the Hubert transformation. An analytical formula of the stress intensity factor for the dislocation pileup is obtained. The reverse H-P relation may be explained by the modified dislocation-pileup-model.
基金financial support from Australian Research Council(ARC)Centre of Excellence for Design in Light Metals
文摘Molecular dynamics simulations of nanocrystalline Cu with average grain sizes of 3.1 nm, 6.2 nm, 12.4 nm and 18.6 nm under uniaxial strain and stress tension at strain rates of 10^8 s^-1, 10^9 S^-1 and 10^10 s^-1 are performed to study the combined grain size, strain rate and loading condition effects on mechanical properties. It is found that the strength of nanocrystalline Cu increases as grain size increases regardless of loading condition. Both the strength and ductility of nanocrystalline Cu increase with strain rate except that there is no monotonic relation between the strength and strain rate for specimens under uni- axial strain loading. Moreover, the strength and ductility of specimens under uniaxial strain loading are lower than those under uniaxial stress loading. The nucleation of voids at grain boundaries and their subsequent growth characterize the failure of specimens under uniaxial strain loading, while grain boundary sliding and necking dominate the failure of specimens under uniaxial stress loading. The rate dependent strength is mainly caused by the dynamic wave effect that limits dislocation motion, while combined twinning and slipping mechanism makes the material more ductile at higher strain rates.
