Numerical Simulation on Thermal-Electrical Characteristics and Electrode Patterns of GaN LEDs with Graphene/NiO_x Hybrid Electrode

The thermal-electrical characteristic of a GaN light-emitting diode （LED） with the hybrid transparent conductive layers （TCLs） of graphene （Gr） and NiOx is investigated by a finite element method. It is indicated that the LED with the compound TCL of 3-layer Gr and 1 nm NiOx has the best thermal-electrical performance from the view point of the maximum temperature and the current density deviation of multiple quantum wells, and the maximum temperature occurs near the n-electrode rather than p-electrode. Furthermore, to depress the current crowding on the LED, the electrode pattern parameters including p- and n-electrode length, p-electrode buried depth and the distance of n-electrode to active area are optimized. It is found that either increasing p- or n-electrode length and buried depth or decreasing the distance of n-electrode from the active area will decrease the temperature of the LED, while the increase of the n-electrode length has more prominent effect. Typically, when the n-electrode length increases to 0.8 times of the chip size, the temperature of the GaN LED with the inm NiOx/3-1ayer-Gr hybrid TCLs could drop about 7K and the current density uniformity could increase by 23.8%, compared to 0.4 times of the chip size. This new finding will be beneficial for improvement of the thermal- electrical performance of LEDs with various conductive TCLs such as NiOx/Gr or ITO/Gr as current spreading layers.

Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

Development of graphene field effect transistors （GFETs） faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 kΩ/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process anneMing on its electrical fabrication.

Investigations on pool boiling critical heat flux, transient characteristics and bonding strength of heater wire with aqua based reduced graphene oxide nanofluids

In the present work, the pool boiling critical heat flux, transient heat transfer characteristics, and bonding strength of thin Ni-Cr wire with aqua based reduced graphene oxide(r GO) nanofluids are experimentally studied. Results indicate:(i) the critical heat flux(CHF) of 0.01, 0.05, 0.1, 0.2, and 0.3 g·L^(-1) concentrations of r GO-water nanofluids varies from 1.42 to 2.40 MW·m^(-2);(ii) the CHF remains same for the tested samples during transient heat transfer studies and(iii) a constant value of CHF upto 10 tests when the nanocoated Ni-Cr wire is tested with DI water and deterioration occurs beyond this which implies a chance of peel off of r GO layer below the critical coating thickness.

Strain effect on graphene nanoribbon carrier statistic in the presence of non-parabolic band structure

The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon（AGNR） is investigated.In addition,the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically.It is found that the property of AGNR in the non-parabolic band region is varied by the strain.The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation.The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure,which varies the physical properties from its normality.The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain.

Optical super-resolution effect induced by nonlinear characteristics of graphene oxide films

In this work, we focus on the optical super-resolution effect induced by strong nonlinear saturation absorption(NSA) of graphene oxide(GO) membranes. The third-order optical nonlinearities are characterized by the canonical Z-scan technique under femtosecond laser(wavelength: 800 nm, pulse width: 100 fs) excitation. Through controlling the applied femtosecond laser energy, NSA of the GO films can be tuned continuously. The GO film is placed at the focal plane as a unique amplitude filter to improve the resolution of the focused field. A multi-layer system model is proposed to present the generation of a deep sub-wavelength spot associated with the nonlinearity of GO films. Moreover, the parameter conditions to achieve the best resolution(~λ/6) are determined entirely. The demonstrated results here are useful for high density optical recoding and storage, nanolithography, and super-resolution optical imaging.