In this manuscript, we are reporting structural, bonding, optical, dielectric, and electrical properties of Gd-doped ZnO composite samples (Zn<sub>1</sub><sub>−</sub><sub>x</sub>Gd&...In this manuscript, we are reporting structural, bonding, optical, dielectric, and electrical properties of Gd-doped ZnO composite samples (Zn<sub>1</sub><sub>−</sub><sub>x</sub>Gd<sub>x</sub>O, x = 0, 0.05, 0.10) prepared by solid-state reaction method. XRD spectra confirm the wurtzite hexagonal phase with a grain size distribution of 42 - 47 nm. The FT-IR spectra confirm bonding behavior like Zn-O, O=C=O, and O-H stretching modes. FESEM micrographs show that the grains of crystallites possess nearly spherical morphology. Optical absorption spectra confirm that the optical band gap decreases systematically from 3.19 eV to 3.15 eV for x = 0.0 to x = 0.10 samples. For all samples, PL spectra exhibited near-band emission, blue emission, and green emission peaks. The dielectric constant decreases as the applied frequency increases. Hall effect results show that with increasing doping concentration of Gd, mobility and resistivity increase while bulk concentration decreases. Current-Voltage study shows that current increases when temperature is increased. Rare earth-doped ZnO is potential material used for optoelectronics and spintronics device applications. Properties of Gd-doped ZnO are studied by various research groups, but dielectric studies are limitedly reported. Therefore, the present research work aims to study the change of electrical, optical, and dielectric properties of Gd-doped ZnO for device applications.展开更多
Recently, we developed the projective truncation approximation for the equation of motion of two-time Green's functions(Fan et al., Phys. Rev. B 97, 165140(2018)). In that approximation, the precision of results d...Recently, we developed the projective truncation approximation for the equation of motion of two-time Green's functions(Fan et al., Phys. Rev. B 97, 165140(2018)). In that approximation, the precision of results depends on the selection of operator basis. Here, for three successively larger operator bases, we calculate the local static averages and the impurity density of states of the single-band Anderson impurity model. The results converge systematically towards those of numerical renormalization group as the basis size is enlarged. We also propose a quantitative gauge of the truncation error within this method and demonstrate its usefulness using the Hubbard-I basis. We thus confirm that the projective truncation approximation is a method of controllable precision for quantum many-body systems.展开更多
本文比较了GYBT突变体1103S与GYBT回复突变体96024的性状差异。结果表明:在自然变温及人工控温诱导下,1103S要表达间段失绿性状(Green-yellow band trait,GYBT),而96024不表达。两者的育性转换特性、多数农艺及谷粒性状无明显差异,但叶...本文比较了GYBT突变体1103S与GYBT回复突变体96024的性状差异。结果表明:在自然变温及人工控温诱导下,1103S要表达间段失绿性状(Green-yellow band trait,GYBT),而96024不表达。两者的育性转换特性、多数农艺及谷粒性状无明显差异,但叶片性状存在显著差异。两者的正常绿叶的叶绿素含量及a/b值、叶片游离氨基酸组分及含量也无明显差异。当GYBT表达时,1103S叶绿素含量比96024低77.49%,叶绿素a/b值比96024高58.99%。1103S和96024是研究GYBT较为理想的近等基因系。展开更多
文摘In this manuscript, we are reporting structural, bonding, optical, dielectric, and electrical properties of Gd-doped ZnO composite samples (Zn<sub>1</sub><sub>−</sub><sub>x</sub>Gd<sub>x</sub>O, x = 0, 0.05, 0.10) prepared by solid-state reaction method. XRD spectra confirm the wurtzite hexagonal phase with a grain size distribution of 42 - 47 nm. The FT-IR spectra confirm bonding behavior like Zn-O, O=C=O, and O-H stretching modes. FESEM micrographs show that the grains of crystallites possess nearly spherical morphology. Optical absorption spectra confirm that the optical band gap decreases systematically from 3.19 eV to 3.15 eV for x = 0.0 to x = 0.10 samples. For all samples, PL spectra exhibited near-band emission, blue emission, and green emission peaks. The dielectric constant decreases as the applied frequency increases. Hall effect results show that with increasing doping concentration of Gd, mobility and resistivity increase while bulk concentration decreases. Current-Voltage study shows that current increases when temperature is increased. Rare earth-doped ZnO is potential material used for optoelectronics and spintronics device applications. Properties of Gd-doped ZnO are studied by various research groups, but dielectric studies are limitedly reported. Therefore, the present research work aims to study the change of electrical, optical, and dielectric properties of Gd-doped ZnO for device applications.
基金Project supported by the National Key Basic Research Program of China(Grant No.2012CB921704)the National Natural Science Foundation of China(Grant No.11374362)+1 种基金the Fundamental Research Funds for the Central Universitiesthe Research Funds of Renmin University of China(Grant No.15XNLQ03)
文摘Recently, we developed the projective truncation approximation for the equation of motion of two-time Green's functions(Fan et al., Phys. Rev. B 97, 165140(2018)). In that approximation, the precision of results depends on the selection of operator basis. Here, for three successively larger operator bases, we calculate the local static averages and the impurity density of states of the single-band Anderson impurity model. The results converge systematically towards those of numerical renormalization group as the basis size is enlarged. We also propose a quantitative gauge of the truncation error within this method and demonstrate its usefulness using the Hubbard-I basis. We thus confirm that the projective truncation approximation is a method of controllable precision for quantum many-body systems.
文摘本文比较了GYBT突变体1103S与GYBT回复突变体96024的性状差异。结果表明:在自然变温及人工控温诱导下,1103S要表达间段失绿性状(Green-yellow band trait,GYBT),而96024不表达。两者的育性转换特性、多数农艺及谷粒性状无明显差异,但叶片性状存在显著差异。两者的正常绿叶的叶绿素含量及a/b值、叶片游离氨基酸组分及含量也无明显差异。当GYBT表达时,1103S叶绿素含量比96024低77.49%,叶绿素a/b值比96024高58.99%。1103S和96024是研究GYBT较为理想的近等基因系。
