Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide attention.However,researchers found emergent reactions at the interfaces between diamond and ferrous ...Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide attention.However,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based devices.Herein,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been established.Surprisingly,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies sites.Meanwhile,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)C.Moreover,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon atoms.The present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.展开更多
Diamond is a highly valuable material with diverse industrial applications,particularly in the fields of semiconductor,optics,and high-power electronics.However,its high hardness and chemical stability make it difficu...Diamond is a highly valuable material with diverse industrial applications,particularly in the fields of semiconductor,optics,and high-power electronics.However,its high hardness and chemical stability make it difficult to realize high-efficiency and ultra-low damage machining of diamond.To address these challenges,several polishing methods have been developed for both single crystal diamond(SCD)and polycrystalline diamond(PCD),including mechanical,chemical,laser,and ion beam processing methods.In this review,the characteristics and application scope of various polishing technologies for SCD and PCD are highlighted.Specifically,various energy beam-based direct and assisted polishing technologies,such as laser polishing,ion beam polishing,plasma-assisted polishing,and laser-assisted polishing,are summarized.The current research progress,material removal mechanism,and infuencing factors of each polishing technology are analyzed.Although some of these methods can achieve high material removal rates or reduce surface roughness,no single method can meet all the requirements.Finally,the future development prospects and application directions of different polishing technologies are presented.展开更多
As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power e...As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).展开更多
The regulating nitrogen content of diamond in a hydrogen-rich high-temperature and high-pressure(HPHT) growth environment was systematically investigated in this work by developing three growth systems,namely, "F...The regulating nitrogen content of diamond in a hydrogen-rich high-temperature and high-pressure(HPHT) growth environment was systematically investigated in this work by developing three growth systems,namely, "FeNi+Ti", "FeNi+G_(3)N_(6)H_(6)",and "FeNi+Ti+C_(3)N_(6)H_(6)".Optical microscopy,infrared spectroscopy,and photoluminescence(PL)spectroscopy measurements were conducted to analyze the spectroscopic characteristics of diamonds grown in these three systems.From our analysis,it was demonstrated that the presence of hydrogen in the sp^(3) hybrid C-H does not directly affect the color of the diamond and facilitates the increase of the nitrogen-vacancy(NV) center concentration in a highnitrogen-content diamond.In addition,titanium plays an important role in nitrogen removal,while its impact on hydrogen doping within the diamond lattice is insignificant.Most importantly,by regulating the ratio of nitrogen impurities that coexist in the nitrogen and hydrogen HPHT environment,the production of hydrogenous Ⅱa-type diamond,hydrogenous Ib-type diamond,and hydrogenous high-nitrogen-type diamonds was achieved with a nitrogen content of less than 1 ppm to 1600 ppm.展开更多
We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on th...We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems.展开更多
Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface...Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.展开更多
To improve the surface quality for aluminum alloy 6061(Al6061) in ultra-precision machining, we investigated the factors affecting the surface finish in single point diamond turning(SPDT)by studying influence of the p...To improve the surface quality for aluminum alloy 6061(Al6061) in ultra-precision machining, we investigated the factors affecting the surface finish in single point diamond turning(SPDT)by studying influence of the precipitates generation of Al6061 on surface integrity and surface roughness.Based on the Johnson-Mehl-Avrami solid phase transformation kinetics equation, theoretical and experimental studies were conducted to build the relationship between the aging condition and the type, size and number of the precipitates for Al6061. Diamond cutting experiments were conducted to machine Al6061 samples under different aging conditions. The experimental results show that, the protruding on the chip surface is mainly Mg_(2)Si and the scratches on the machined surface mostly come from the iron-containing phase(α-, β-AlFeSi).Moreover, the generated Mg_(2)Si and α-, β-AlFeSi affect the surface integrity and the diamond turned surface roughness. Especially, the achieved surface roughness in SPDT is consistent with the variation of the number of AlFeSi and Mg_(2)Si with the medium size(more than 1 μm and less than 2 μm) in Al6061.展开更多
This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used t...This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.展开更多
The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarizatio...The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.展开更多
We present a quantitative measurement of the horizontal component of the microwave magnetic field of a coplanar waveguide using a quantum diamond probe in fiber format.The measurement results are compared in detail wi...We present a quantitative measurement of the horizontal component of the microwave magnetic field of a coplanar waveguide using a quantum diamond probe in fiber format.The measurement results are compared in detail with simulation,showing a good consistence.Further simulation shows fiber diamond probe brings negligible disturbance to the field under measurement compared to bulk diamond.This method will find important applications ranging from electromagnetic compatibility test and failure analysis of high frequency and high complexity integrated circuits.展开更多
Diamond/aluminium composites have attracted attention in the field of thermal management of electronic packaging for their excellent properties.In order to solve the interfacial problem between diamond and aluminium,a...Diamond/aluminium composites have attracted attention in the field of thermal management of electronic packaging for their excellent properties.In order to solve the interfacial problem between diamond and aluminium,a novel process combining pressure infiltration with vacuum-assisted technology was proposed to prepare diamond/aluminum composites.The effect of diamond particle size on the microstructure and properties of the diamond/Al-12Si composites was investigated.The results show that the diamond/Al-12Si composites exhibit high relative density and a uniform microstructure.Both thermal conductivity and coefficient of thermal expansion increase with increasing particle size,while the bending strength exhibits the opposite trend.When the average diamond particle size increases from 45μm to 425μm,the thermal conductivity of the composites increases from 455 W·m^(-1)·K^(-1)to 713 W·m^(-1)·K^(-1)and the coefficient of thermal expansion increases from 4.97×10^(-6)K^(-1)to 6.72×10^(-6)K^(-1),while the bending strength decreases from 353 MPa to 246 MPa.This research demonstrates that high-quality composites can be prepared by the vacuum-assisted pressure infiltration process and the thermal conductivity of the composites can be effectively improved by increasing the diamond particle size.展开更多
Micrometer-sized diamonds were incorporated into silicon nitride(Si_(3)N_(4))matrix to manufacture high-performance Si_(3)N_(4)-based composites using spark plasma sintering at 1500℃under 50 MPa.The effects of the di...Micrometer-sized diamonds were incorporated into silicon nitride(Si_(3)N_(4))matrix to manufacture high-performance Si_(3)N_(4)-based composites using spark plasma sintering at 1500℃under 50 MPa.The effects of the diamond content on the phase composition,microstructure,mechanical properties and thermal conductivity of the composites were investigated.The results showed that the addition of diamond could effectively improve the hardness of the material.The thermal conductivity of Si_(3)N_(4)increased to 52.97 W/m·k at the maximum with the addition of 15 wt%diamond,which was 27.5%higher than that of the monolithic Si_(3)N_(4).At this point,the fracture toughness was 7.54 MPa·m^(1/2).Due to the addition of diamond,the composite material generated a new substance,MgSiN2,which effectively combined Si_(3)N_(4)with diamond.MgSiN2 might improve the hardness and thermal conductivity of the materials.展开更多
A photonic crystal nanobeam cavity(M-PCNC)with a structure incorporating a mixture of diamond-shaped and circular air holes is pro-posed.The performance of the cavity is simulated and studied theoretically.Using thefin...A photonic crystal nanobeam cavity(M-PCNC)with a structure incorporating a mixture of diamond-shaped and circular air holes is pro-posed.The performance of the cavity is simulated and studied theoretically.Using thefinite-difference time-domain method,the parameters of the M-PCNC,including cavity thickness and width,lattice constant,and radii and numbers of holes,are optimized,with the quality factor Q and mode volume Vm as performance indicators.Mutual modulation of the lattice constant and hole radius enable the proposed M-PCNC to realize outstanding performance.The optimized cavity possesses a high quality factor Q 1.45105 and an ultra-small mode=×volume Vm 0.01(λ/n)[Zeng et al.,Opt Lett 2023:48;3981–3984]in the telecommunications wavelength range.Light can be progres-=sively squeezed in both the propagation direction and the perpendicular in-plane direction by a series of interlocked anti-slots and slots in the diamond-shaped hole structure.Thereby,the energy can be confined within a small mode volume to achieve an ultra-high Q/Vm ratio.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12274371,62271450,U21A2070,21805247,12074345)Cross-Disciplinary Innovative Research Group Project of Henan Province(Grant No.232300421004).
文摘Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide attention.However,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based devices.Herein,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been established.Surprisingly,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies sites.Meanwhile,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)C.Moreover,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon atoms.The present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.
基金sponsored by the National Natural Science Foundation of China(Nos.51835004,U22A20198)the Major Science and Technology Projects in Henan Province(221100230300)the 111 Project(No.B23011)。
文摘Diamond is a highly valuable material with diverse industrial applications,particularly in the fields of semiconductor,optics,and high-power electronics.However,its high hardness and chemical stability make it difficult to realize high-efficiency and ultra-low damage machining of diamond.To address these challenges,several polishing methods have been developed for both single crystal diamond(SCD)and polycrystalline diamond(PCD),including mechanical,chemical,laser,and ion beam processing methods.In this review,the characteristics and application scope of various polishing technologies for SCD and PCD are highlighted.Specifically,various energy beam-based direct and assisted polishing technologies,such as laser polishing,ion beam polishing,plasma-assisted polishing,and laser-assisted polishing,are summarized.The current research progress,material removal mechanism,and infuencing factors of each polishing technology are analyzed.Although some of these methods can achieve high material removal rates or reduce surface roughness,no single method can meet all the requirements.Finally,the future development prospects and application directions of different polishing technologies are presented.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600)the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009)the National Natural Science Foundation of China(Grant No.61927806)。
文摘As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).
基金supported by the National Natural Science Foundation of China (Grant Nos. 12274373 and 12004341)the Open Project of Inner Mongolia Key Laboratory of High-pressure Phase Functional Materials,Chifeng University (Grant No. cfxygy202301)+1 种基金the Science and Technology Project of Xilinguole Province (Grant No. 202209)the Natural Science Foundation of Henan Province (Grant No. 242300421155)。
文摘The regulating nitrogen content of diamond in a hydrogen-rich high-temperature and high-pressure(HPHT) growth environment was systematically investigated in this work by developing three growth systems,namely, "FeNi+Ti", "FeNi+G_(3)N_(6)H_(6)",and "FeNi+Ti+C_(3)N_(6)H_(6)".Optical microscopy,infrared spectroscopy,and photoluminescence(PL)spectroscopy measurements were conducted to analyze the spectroscopic characteristics of diamonds grown in these three systems.From our analysis,it was demonstrated that the presence of hydrogen in the sp^(3) hybrid C-H does not directly affect the color of the diamond and facilitates the increase of the nitrogen-vacancy(NV) center concentration in a highnitrogen-content diamond.In addition,titanium plays an important role in nitrogen removal,while its impact on hydrogen doping within the diamond lattice is insignificant.Most importantly,by regulating the ratio of nitrogen impurities that coexist in the nitrogen and hydrogen HPHT environment,the production of hydrogenous Ⅱa-type diamond,hydrogenous Ib-type diamond,and hydrogenous high-nitrogen-type diamonds was achieved with a nitrogen content of less than 1 ppm to 1600 ppm.
基金Project supported by the National Natural Science Foundation of China (Grant No.12074367)Anhui Initiative in Quantum Information Technologies,the National Key Research and Development Program of China (Grant No.2020YFA0309804)+3 种基金Shanghai Municipal Science and Technology Major Project (Grant No.2019SHZDZX01)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No.XDB35020200)Innovation Program for Quantum Science and Technology (Grant No.2021ZD0302002)New Cornerstone Science Foundation。
文摘We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems.
基金the National Natural Sci-ence Foundation of China(Grant No.62274084)the Fun-damental Research Funds for the Central Universities(Grant No.0210-14380193).
文摘Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.
基金Funded by Natural Science Foundation of Guangdong Province,China (No.2017A030313330)Science and Technology Program of Guangzhou (No.201804020040)。
文摘To improve the surface quality for aluminum alloy 6061(Al6061) in ultra-precision machining, we investigated the factors affecting the surface finish in single point diamond turning(SPDT)by studying influence of the precipitates generation of Al6061 on surface integrity and surface roughness.Based on the Johnson-Mehl-Avrami solid phase transformation kinetics equation, theoretical and experimental studies were conducted to build the relationship between the aging condition and the type, size and number of the precipitates for Al6061. Diamond cutting experiments were conducted to machine Al6061 samples under different aging conditions. The experimental results show that, the protruding on the chip surface is mainly Mg_(2)Si and the scratches on the machined surface mostly come from the iron-containing phase(α-, β-AlFeSi).Moreover, the generated Mg_(2)Si and α-, β-AlFeSi affect the surface integrity and the diamond turned surface roughness. Especially, the achieved surface roughness in SPDT is consistent with the variation of the number of AlFeSi and Mg_(2)Si with the medium size(more than 1 μm and less than 2 μm) in Al6061.
基金supported by the National Key Research and Development Program(No.2019YFE03100200)the State Key Lab for Advanced Metals and Materials,the Fund of National Key Laboratory of Solid-State Microwave Devices and Circuits,the National Natural Science Foundation of China(No.52102034)the Or-ganized Research Fund of North China University of Tech-nology(No.2023YZZKY12).The authors are very grateful for the financial support of these institutions.
文摘This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3608601).
文摘The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.
基金Project supported by the National Key Research and Development Program of China (Grant No.2021YFB2012600)。
文摘We present a quantitative measurement of the horizontal component of the microwave magnetic field of a coplanar waveguide using a quantum diamond probe in fiber format.The measurement results are compared in detail with simulation,showing a good consistence.Further simulation shows fiber diamond probe brings negligible disturbance to the field under measurement compared to bulk diamond.This method will find important applications ranging from electromagnetic compatibility test and failure analysis of high frequency and high complexity integrated circuits.
文摘Diamond/aluminium composites have attracted attention in the field of thermal management of electronic packaging for their excellent properties.In order to solve the interfacial problem between diamond and aluminium,a novel process combining pressure infiltration with vacuum-assisted technology was proposed to prepare diamond/aluminum composites.The effect of diamond particle size on the microstructure and properties of the diamond/Al-12Si composites was investigated.The results show that the diamond/Al-12Si composites exhibit high relative density and a uniform microstructure.Both thermal conductivity and coefficient of thermal expansion increase with increasing particle size,while the bending strength exhibits the opposite trend.When the average diamond particle size increases from 45μm to 425μm,the thermal conductivity of the composites increases from 455 W·m^(-1)·K^(-1)to 713 W·m^(-1)·K^(-1)and the coefficient of thermal expansion increases from 4.97×10^(-6)K^(-1)to 6.72×10^(-6)K^(-1),while the bending strength decreases from 353 MPa to 246 MPa.This research demonstrates that high-quality composites can be prepared by the vacuum-assisted pressure infiltration process and the thermal conductivity of the composites can be effectively improved by increasing the diamond particle size.
基金Funded by the Key Research and Development Plan of Jiangxi Province(No.2020ZDYFB0017)the National Key Research and Development Plan(No.2021YFB3701400)the National Natural Science Foundation of China((No.92163208)。
文摘Micrometer-sized diamonds were incorporated into silicon nitride(Si_(3)N_(4))matrix to manufacture high-performance Si_(3)N_(4)-based composites using spark plasma sintering at 1500℃under 50 MPa.The effects of the diamond content on the phase composition,microstructure,mechanical properties and thermal conductivity of the composites were investigated.The results showed that the addition of diamond could effectively improve the hardness of the material.The thermal conductivity of Si_(3)N_(4)increased to 52.97 W/m·k at the maximum with the addition of 15 wt%diamond,which was 27.5%higher than that of the monolithic Si_(3)N_(4).At this point,the fracture toughness was 7.54 MPa·m^(1/2).Due to the addition of diamond,the composite material generated a new substance,MgSiN2,which effectively combined Si_(3)N_(4)with diamond.MgSiN2 might improve the hardness and thermal conductivity of the materials.
基金supported by the Open Fund of the State Key Laboratory of Advanced Optical Communication Systems and Networks (SJTU)(Grant No. 2023GZKF018)the Open Fund of IPOC (BUPT)(Grant No. IPOC2021B03)+4 种基金the National Natural Science Foundation of China (NSFC)(Grant No. 11974188)the China Postdoctoral Science Foundation (Grant Nos. 2021T140339 and 2018M632345)the Jiangsu Province Postdoctoral Science Foundation (Grant No. 2021K617C)the Postgraduate Research and Practice Innovation Program of Jiangsu Province (Grant No.KYCX22_0945)the Qing Lan Project of Jiangsu Province
文摘A photonic crystal nanobeam cavity(M-PCNC)with a structure incorporating a mixture of diamond-shaped and circular air holes is pro-posed.The performance of the cavity is simulated and studied theoretically.Using thefinite-difference time-domain method,the parameters of the M-PCNC,including cavity thickness and width,lattice constant,and radii and numbers of holes,are optimized,with the quality factor Q and mode volume Vm as performance indicators.Mutual modulation of the lattice constant and hole radius enable the proposed M-PCNC to realize outstanding performance.The optimized cavity possesses a high quality factor Q 1.45105 and an ultra-small mode=×volume Vm 0.01(λ/n)[Zeng et al.,Opt Lett 2023:48;3981–3984]in the telecommunications wavelength range.Light can be progres-=sively squeezed in both the propagation direction and the perpendicular in-plane direction by a series of interlocked anti-slots and slots in the diamond-shaped hole structure.Thereby,the energy can be confined within a small mode volume to achieve an ultra-high Q/Vm ratio.
