SILICON carbide, a semiconductor with chemistry inertia, is well suited to fabricate optoelectronic device working at high temperature, high power, high frequency, and in high radiation environments. Among the hundred...SILICON carbide, a semiconductor with chemistry inertia, is well suited to fabricate optoelectronic device working at high temperature, high power, high frequency, and in high radiation environments. Among the hundreds of SiC polytypes, 4H-SiC, with a wider bandgap, a higher and much less anisotropic electron mobility than 6H-SiC, has aroused much attention .展开更多
文摘SILICON carbide, a semiconductor with chemistry inertia, is well suited to fabricate optoelectronic device working at high temperature, high power, high frequency, and in high radiation environments. Among the hundreds of SiC polytypes, 4H-SiC, with a wider bandgap, a higher and much less anisotropic electron mobility than 6H-SiC, has aroused much attention .
