Microscopic growth mechanism and edge states of monolayer 1T'-MoTe_(2)

Transition metal ditellurides(TMTDs)have versatile physical properties,including non-trivial topology,Weyl semimetal states and unique spin texture.Controlled growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their applications.Here,we demonstrate the epitaxial growth of 1T'-MoTe_(2) on Au(111)and graphitized silicon carbide(Gr/SiC)by molecular beam epitaxy(MBE).We investigate the morphology of the grown1T'-MoTe_(2) at the atomic level by scanning tunnelling microscopy(STM)and reveal the corresponding microscopic growth mechanism.It is found that the unique ordered Te structures preferentially deposited on Au(111)regulate the growth of monolayer single crystal 1T'-MoTe_(2),while the Mo clusters were preferentially deposited on the Gr/SiC substrate,which impedes the ordered growth of monolayer MoTe_(2).We confirm that the size of single crystal 1T'-MoTe_(2) grown on Au(111)is nearly two orders of magnitude larger than that on Gr/SiC.By scanning tunnelling spectroscopy(STS),we observe that the STS spectrum of the monolayer 1T'-MoTe_(2) nano-island at the edge is different from that at the interior,which exhibits enhanced conductivity.

Research of growth mechanism of ceramic coatings fabricated by micro-arc oxidation on magnesium alloys at high current mode

Micro-arc oxidation(MAO)coatings of ZK60 magnesium alloys were formed in a self-developed dual electrolyte composed of sodium silicate and phosphate at the high constant current of 1.8 A(15 A/dm^(2)).The MAO process and growth mechanism were investigated by scanning electron microscopy(SEM)coupled with an energy dispersive spectrometer(EDS),confocal laser scanning microscopy and X-ray diffraction(XRD).The results indicate that the growth process of MAO coating mainly goes through“forming→puncturing→rapid growth of micro-arc oxidation→large arc discharge→self-repairing”.The coating grows inward and outward at the same time in the initial stage,but outward growth of the coating is dominant later.Mg,Mg_(2)SiO_(4) and MgO are the main phases of ceramic coating.

Recent progresses in the suppression method based on the growth mechanism of lithium dendrite

Lithium secondary batteries（LSBs） with high energy densities need to be further developed for future applications in portable electronic devices, electric vehicles, hybrid electric vehicles and smart grids. Lithium metal is the most promising electrode for next-generation rechargeable batteries. However, the formation of lithium dendrite on the anode surface leads to serious safety concerns and low coulombic efficiency.Recently, researchers have made great efforts and significant progresses to solve these problems. Here we review the growth mechanism and suppression method of lithium dendrite for LSBs’ anode protection. We also establish the relationship between the growth mechanism and suppression method. The research direction for building better LSBs is given by comparing the advantages and disadvantages of these methods based on the growth mechanism.

GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD

High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.

Growth mechanisms for spherical Ni_(0.815)Co_(0.15)Al_(0.035)(OH)_(2) precursors prepared via the ammonia complexation precipitation method

The microstructures of precursors strongly affect the electrochemical performance of Ni-rich layerstructured cathode materials.In this study,the growth behaviour of Ni_(0.815)Co_(0.15)Al_(0.035)(OH)_2(NCA) prepared via the ammonia complexation precipitation method in a 50-L-volume continuously stirred tank reactor(CSTR) is studied in detail.The growth of Ni(OH)2-based hydroxide can be divided into a nucleation process,an agglomeration growth process,a process in which multiple growth mechanisms coexist,and an interface growth process over time,while the inner structure of the CSTR can be divided into a nucleation zone,a complex dissolution zone,a growth zone,and a maturation zone.The concentration of ammonium ions affects the growth habit of the primary crystal significantly due to its specific adsorption on the electronegative crystal plane.When the ammonia concentration is <1.5 mol L^(-1) at 60℃ at pH=11.5,the precursors grow preferentially along the(1 0 1) crystal plane,whereas they grow preferentially along the(0 0 1) crystal plane when the concentration is >2.0 mol L^(-1).The LiNi_(0.815)Co_(0.15)Al_(0.035)O_2 materials inherit the grain structure of the precursor.Materials prepared from precursors with(1 0 1)preferential primary particles show a higher specific capacity and better rate performance than those that were prepared from(0 0 1) preferential primary particles,but the latter realize a better cycling performance than the former.

Preparation and growth mechanism of nickel nanowires under applied magnetic field

Nickel nanowires with large aspect ratio of up to 300 have been prepared by a hydrazine hydrate reduction method under applied magnetic field. The diameter of nickel nanowires is about 200 nm and length up to 60 μm. The role of magnetic field on the growth of magnetic nanowires is discussed and a magnetic nanowire growth mechanism has been proposed. Nickel ions are firstly reduced to nickel atoms by hydrazine hydrates in a strong alkaline solution and grow into tiny spherical nanoparticles. Then, these magnetic particles will align under a magnetic force and form linear chains. Furthermore, the as-formed chains can enhance the local magnetic field and attract other magnetic particles nearby, resulting finally as linear nanowires. The formation and the size of nanowires depend strongly on the magnitude of applied magnetic field.

Morphology control of ultrafine cuprous oxide powder and its growth mechanism

Four shapes of Cu2O particles as sphere,cube,truncated octahedron and octahedron were prepared via glucose reduction of Cu(Ⅱ)under alkaline condition.The products were characterized by XRD and SEM.The effects of the precursor(CuO,Cu(OH)2), reaction temperature and glucose concentration on morphology of Cu2O particles were investigated,and the mechanism of morphology control was discussed on the basic theory of crystal nucleation and growth.It is found that the Cu+supersaturation is remarkably influenced by the precursor kind,reaction temperature and glucose concentration,and the morphology of Cu2O particles can be controlled by the Cu+supersaturation.

Growth mechanism and photocatalytic evaluation of flower-like ZnO microstructures prepared with SDBS assistance

Flower-like ZnO microstructures were successfully produced using a hydrothermal method employing ZnSO_(4)/(NH_(4))_(2)SO_(4) as a raw material.The effect of the operating parameters of the hydrothermal temperature, OH^(-)/Zn^(2+) molar ratio, time, and amount of dispersant on the phase structure and micromorphology of the ZnO particles were investigated.The synthesis conditions of the flower-like ZnO microstructures were: hydrothermal temperature of 160℃, OH^(-)/Zn^(2+) molar ratio of 5:1, reaction time of 4 h, and 4 mL of dispersant.The flower-like ZnO microstructures were comprised of hexagon-shaped ZnO rods arranged in a radiatively.Degradation experiments of Rhodamine B with the flower-like ZnO microstructures demonstrated a degradation efficiency of 97.6% after 4 h of exposure to sunshine, indicating excellent photocatalytic capacity.The growth mechanism of the flower-like ZnO microstructures was presented.

Origin and growth mechanisms of strike-slip faults in the central Tarim cratonic basin, NW China

Through fault structure analysis and chronology study, we discuss the origin and growth mechanisms of strike-slip faults in the Tarim Basin.(1) Multiple stages strike-slip faults with inherited growth were developed in the central Tarim cratonic basin. The faults initiation time is constrained at the end of Middle Ordovician of about 460 Ma according to U-Pb dating of the fault cements and seismic interpretation.(2) The formation of the strike-slip faults was controlled by the near N-S direction stress field caused by far-field compression of the closing of the Proto-Tethys Ocean.(3) The faults localization and characteristics were influenced by the pre-existing structures of the NE trending weakening zones in the basement and lithofacies change from south to north.(4) Following the fault initiation under the Andersonian mechanism, the strike-slip fault growth was dominantly fault linkage, associated with fault tip propagation and interaction of non-Andersonian mechanisms.(5) Sequential slip accommodated deformation in the conjugate strike-slip fault interaction zones, strong localization of the main displacement and deformation occurred in the overlap zones in the northern Tarim, while the fault tips, particularly of narrow-deep grabens, and strike-slip segments in thrust zones accumulated more deformation and strain in the Central uplift. In conclusion, non-Andersonian mechanisms, dominantly fault linkage and interaction, resulted in the small displacement but long intraplate strike-slip fault development in the central Tarim Basin. The regional and localized field stress, and pre-existing structures and lithofacies difference had strong impacts on the diversity of the strike-slip faults in the Tarim cratonic basin.

Growth mechanism and modification of electronic and magnetic properties of silicene

Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag(111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.

Shape controlled synthesis and growth mechanism of one-dimensional zinc oxide nanomaterials

Some types of ZnO nanostructures with various shape and size, including tetrapod-like ZnO (T-ZnO) nanorods, nanowires and nanonbbons, have been obtained by controlled growth process. The nanostructures of ZnO have been investigated by means of field-emission scanning electron microscope, transmission electron microscopy and high-resolution transmission electron microscopy. The growth mechanisms of various ZnO nanostructures were proposed and discussed.

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction （XRD） study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction （x） is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.

Growth Mechanism and Characterization of ZnO 3D Nanocrystals by Laser Irradiation & Coaxially Transporting O_2

Different three-dimension （3D） nanotetrapods, containing club-like nanocrystals, nanotetrapods and four-foot-like nanocrystals were synthesized from Zinc sheet via CO2 laser irradiation and coaxially transporting O2. Different nanoproducts were fabricated by changing the content of oxygen in the experiment. The morphologies, components, phase structures and optical properties of the products were investigated by a field-emission scanning electron microscopy, an X-ray diffraction, an energy dispersed X-ray spectrometer and a photoluminescence spectroscope. The X-ray diffraction spectra were obtained on a Rigaku D/max 2500PC diffractometer. The experimental results reveal that high quality ZnO nanotetrapods can be fabricated on the special parameters, and growth of ZnO nanotetrapods depends on Vapour-Liquid-Solid（VLS） model, and the content of oxygen in the gas, namely, oxygen partial pressure is one of main factors to control morphologies and optical properties ofZnO nanotetrapods; these advantages above are important for realization of optoelectronic devices.

Massive Si Phase and Its Growth Mechanism in Al-Si Casting Alloy

Optical microscope and scanning electron microscope were used to observe the microstructure of the AI-11.6%Si and AI-11.6%Si-0.4%Mg alloys and the morphology of the massive silicon particles. It is found that the massive silicon phase, observed in the unfully modified alloys with 0.010%Sr, disappears completely in the alloys fully modified with 0.020%Sr. The serrations and reentrant edges shown in the massive silicon particles with the conventional casting indicate that the TPRE mechanism plays an important role in the growth of the massive silicon phase. The ripples and steps suggest that the "lateral microscopic growth" may be another operating mechanism.

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morphologies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov （SK） model. ZnSe films were identified by the X-ray diffraction pattern （XRD）, the scanning electron microscope （SEM）, the X-ray photoelectron spectroscope （XPS） and the photoluminescence （PL） techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.

ANALYSIS OF THE GROWTH MECHANISM OF TiAl_3 WHISKERS PREPARED BY IN SITU REACTION IN MOLTEN ALUMINUM

Some TiAl3 whiskers are found to be produced simultaneously during the formation process of TiB2 Particulates fabricated by in situ reaction in molten aluminum. The thec t of temperature of molten aluminum on the morphologies of the TiAl3 whiskers and the growth mechanism of the whiskers are studied in this paper. The results show that the aspect rutio of the TiAl3 whiskers decreases with the increase of the temperoture. The growth of the whiskers is proved to be controlled by a Vapor-LiquidSoltd (VLS) mechanism. The titanium and aluminum atoms in the catalytic droplet,however, have been coofrmed to react with each othen which is dtherent from other whlskcrs growing by a VLS mcchanism where the compostion in the catalytic droplet is a constant.

The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO_2 nanowires

Ablation under oxyacetylene torch with heat flux of 4186.8（10%kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration（CVI） combined with liquid silicon infiltration（LSI） process.The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC.The doped SiC and the ablation products SiO2 derived from it play key roles in ablation process.Bulk quantities of SiO2 nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation.The growth mechanism of the SiO_2 nanowires was interpreted with a developed vapor-liquid-solid（VLS） driven by the temperature gradient.

THE GROWTH MECHANISM OF Al_2O_3/Al COMPOS-ITES BY DIRECTED OXIDATION OF MOLTEN METALS

The process of the directed oxidiation of alloy Al-1%Mg-7%Si was invertigated by X-Ray diffraction (XRD). optical microscopy, scanning electron microscopy (SEM) and energy dispersive spectrometer(EDS) ,which included evolution of the surface of the melt in the incubation period, nucleation of Al2O3/metal composite and microstruc-ture of Lanxide material its growth front . Some new results about the mechanism of the for mation of Al2O3 are involved.

The Evolution of the Extinction and Growth Mechanism of the Silver Nanoplates

The time-dependence evolution of the extinction spectra of the silver nanoplates is studied to analyze the underlying physical mechanism of the growth process. As the synthesis cycles increase, the wavelength of the absorption peak is first blue-shifted and then is followed by the red shift, attributing to the mode alteration of the longitudinal surface plasmon resonance of the silver nanoplates. The capping agents are also optimized for the convenient and speedy growth of the large integrated Ag nanostructure. These observations expand the comprehensive understanding of plasmon resonance of the Ag nanoplates, and give a better manipulation of their applications in the plasmonie nanodevices.

Understanding the growth mechanisms of metal-based core–shell nanostructures revealed by in situ liquid cell transmission electron microscopy

Metal-based core-shell nanostructures have garnered enduring interest due to their unique properties and functionalities.However,their growth and transformation mechanisms in liquid media remain largely unknown because they lack direct observation of the dynamic growth process with high spatial and temporal resolution.Developing the in situ liquid cell transmission electron microscopy(TEM)technique offers unprecedented real-time imaging and spectroscopy capabilities to directly track the evolution of structural and chemical transformation of metal-based core–shell nanostructures in liquid media under their working condition.Here,this review highlights recent progress in utilizing in situ liquid cell TEM characterization technique in investigating the dynamic evolution of material structure and morphology of metal-based core–shell nanostructures at the nano/atomic scale in real-time.A brief introduction of the development of liquid cells for in situ TEM is first given.Subsequently,recent advances in in situ liquid cell TEM for the fundamental study of growth mechanisms of metal based core–shell nanostructures are discussed.Finally,the challenge and future developments of metalbased core–shell nanostructures for in situ liquid cell TEM are proposed.Our review is anticipated to inspire ongoing interest in revealing unseen growth dynamics of core–shell nanostructures by in situ liquid cell TEM technique.