The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells (MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) on their structures an...The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells (MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) on their structures and performances were studied. Continuously grown MQWs, that is, no growth interruption at the heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared with interruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line corresponding to the compositional fluctuation and impurity adsorption, and indicated noncommutative structures of AlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained by continuously grown method while growth interruption caused performance degradation. It was concluded that growth interruption may cause accumulation of residua1 impurities in the ambient as well as compositional fluctuation while continuous growth at very low growth rates can overcome such problems.展开更多
Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) perform...Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).展开更多
AlGaAs/GaAs multi-quantum well (MQW) was prepared by molecular beam epitaxy(MBE) with growth-interrupted heterointerface (GIH) method and continuous growth (CG) method, respectively. The microstructures of the MQWs we...AlGaAs/GaAs multi-quantum well (MQW) was prepared by molecular beam epitaxy(MBE) with growth-interrupted heterointerface (GIH) method and continuous growth (CG) method, respectively. The microstructures of the MQWs were characterized by double-crystal X-ray rocking curve (DCRC) and atomic force microscopy (AFM), and the photoluminescence (PL) properties of the MQWs were also studied. The MQWs grown with GIH method show that higher order satellite peaks of Pendell?sung fringes are observed in DCRC, the roughness of surface is much reduced in AFM, and the full width at half maximum (FWHM) of exciton line is much narrower in PL. The results indicate that the GIH method reduces the monolayer growth step density at the heterointerface due to the migration of surface atoms for a few minutes growth interruption, and substantially improves the quality of AlGaAs/GaAs MQWs.展开更多
This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures ...This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.展开更多
文摘The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells (MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) on their structures and performances were studied. Continuously grown MQWs, that is, no growth interruption at the heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared with interruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line corresponding to the compositional fluctuation and impurity adsorption, and indicated noncommutative structures of AlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained by continuously grown method while growth interruption caused performance degradation. It was concluded that growth interruption may cause accumulation of residua1 impurities in the ambient as well as compositional fluctuation while continuous growth at very low growth rates can overcome such problems.
文摘Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).
文摘AlGaAs/GaAs multi-quantum well (MQW) was prepared by molecular beam epitaxy(MBE) with growth-interrupted heterointerface (GIH) method and continuous growth (CG) method, respectively. The microstructures of the MQWs were characterized by double-crystal X-ray rocking curve (DCRC) and atomic force microscopy (AFM), and the photoluminescence (PL) properties of the MQWs were also studied. The MQWs grown with GIH method show that higher order satellite peaks of Pendell?sung fringes are observed in DCRC, the roughness of surface is much reduced in AFM, and the full width at half maximum (FWHM) of exciton line is much narrower in PL. The results indicate that the GIH method reduces the monolayer growth step density at the heterointerface due to the migration of surface atoms for a few minutes growth interruption, and substantially improves the quality of AlGaAs/GaAs MQWs.
基金Work supported by the National Natural Science Foundation of China.
文摘This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.
