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Theoretical Analysis on Effect of Adding Argon to Hydrogen Plasma
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作者 胡纯栋 E.Speth 《Plasma Science and Technology》 SCIE EI CAS CSCD 2004年第2期2204-2212,共9页
An increased of H ion beam current whenever argon gas is added has been observed. The physics behind argon effect is that in the production of more H atoms, a part of H atoms will be converted to H2*(v>4) to increa... An increased of H ion beam current whenever argon gas is added has been observed. The physics behind argon effect is that in the production of more H atoms, a part of H atoms will be converted to H2*(v>4) to increase H- density. Increase of nH depends on the rate of added Ar η %, primary filling pressure P, electron density neAr and recombination coefficient 7 of H atom. Adding 25% Ar is optimal, although there have been assumed various parameters. Increase of nH depends on decreased recombination coefficient 7, and increased primary filling pressure P. The increase of nH is small when the pressure P < 0.3 Pa. Optimized volume size L/R^2 is optimal for obtaining a maximum Ar effect. 展开更多
关键词 h- ion beam ar effect neutral beam injection
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EAST上磁位形和杂质对束离子约束和加热影响的数值模拟
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作者 刘源煜 向东 +1 位作者 龚学余 路兴强 《计算物理》 CSCD 北大核心 2023年第3期282-290,共9页
利用程序ORBIT和TRANSP/NUBEAM模拟研究全超导托卡马克实验装置(EAST)等离子体位形和杂质的特征参数Z_(eff)(有效电荷数)对束离子约束和加热的影响。结果表明:在等离子体位形中,随着最后一个封闭通量表面与中面外容器壁之间的距离(gapo... 利用程序ORBIT和TRANSP/NUBEAM模拟研究全超导托卡马克实验装置(EAST)等离子体位形和杂质的特征参数Z_(eff)(有效电荷数)对束离子约束和加热的影响。结果表明:在等离子体位形中,随着最后一个封闭通量表面与中面外容器壁之间的距离(gapout)和环向磁场强度的增加,快离子的损失(包含瞬时损失和波纹损失)也随之减少,因此中性束的加热效率随着gapout的增加而提高。此外,随着背景等离子体杂质的增加(即Zeff的增加),增加了束损失,导致最后束加热效率降低。选择合适的磁位形,同时降低背景的杂质含量可以增强快离子约束,提高束的加热效率。 展开更多
关键词 中性束注入 磁位形 有效电荷数 快离子约束 快离子损失
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