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Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
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作者 包晓清 葛道晗 +4 位作者 张圣 李金鹏 周萍 焦继伟 王跃林 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第2期664-670,共7页
In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the ... In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semiquantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250. 展开更多
关键词 pore density SCR width h-passivation current-burst-model breakdown mechanism
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