A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） el...A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage （I-V） characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.展开更多
A metal-flee purple H2Pc single crystal was synthesized by a facile solvothermal method, and its solubility and near-infrared （NIR） optical properties were also investigated due to its potential applications as a li...A metal-flee purple H2Pc single crystal was synthesized by a facile solvothermal method, and its solubility and near-infrared （NIR） optical properties were also investigated due to its potential applications as a light-emitting layer for OLEDs. The H2Pc single crystal is insoluble in 1-chlorine naphthalene and other organic solvents. It gives a wide absorption in the range from 620 nm to 679 nm and a wide emission in near 922 nm. As an active light-emitting layer, H2Pc was employed to fabricate electroluminescent （EL） devices with a structure of ITO/NPB （30 nm）/Alq3：H2Pc （30 nm）/BCP （20 nm）/ Alq3 （20 nm）/Al. The emission center is at 936 nm when the H2Pc doping concentration is 20 wt%. The doping concentration strongly governs the emission intensity. When doping concentration decreases from 10 wt% to 1 wt%, the emission intensity remarkably fades, and simultaneously the emission center undergoes a blue shift.展开更多
基金supported by the GIK Institute of Engineering Science and Technology,Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan
文摘A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage （I-V） characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.
基金financially supported by the Ph.D. Initiative Science Foundation of Inner Mongolia University for the Nationalities(Nos. BS289, BS314)Natural Science Research Project of Inner Mongolia University for the Nationalities (No. NMDYB15076)the Fundamental Research Funds for the Central Universities (No. DUT14LK02)
文摘A metal-flee purple H2Pc single crystal was synthesized by a facile solvothermal method, and its solubility and near-infrared （NIR） optical properties were also investigated due to its potential applications as a light-emitting layer for OLEDs. The H2Pc single crystal is insoluble in 1-chlorine naphthalene and other organic solvents. It gives a wide absorption in the range from 620 nm to 679 nm and a wide emission in near 922 nm. As an active light-emitting layer, H2Pc was employed to fabricate electroluminescent （EL） devices with a structure of ITO/NPB （30 nm）/Alq3：H2Pc （30 nm）/BCP （20 nm）/ Alq3 （20 nm）/Al. The emission center is at 936 nm when the H2Pc doping concentration is 20 wt%. The doping concentration strongly governs the emission intensity. When doping concentration decreases from 10 wt% to 1 wt%, the emission intensity remarkably fades, and simultaneously the emission center undergoes a blue shift.
