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硬X射线光电子能谱在半导体材料和器件中的应用
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作者 宋华平 杨安丽 《半导体技术》 CAS 北大核心 2024年第6期505-513,共9页
与常规X射线光电子能谱(XPS,能量E<2 keV))相比,硬X射线光电子能谱(HAXPES)由于采用较高能量的X射线(E>2 keV),具有更大的探测深度,已经成为研究复杂材料体系的体性质,以及多层薄膜结构和纳米复合结构界面性质的重要分析工具。简... 与常规X射线光电子能谱(XPS,能量E<2 keV))相比,硬X射线光电子能谱(HAXPES)由于采用较高能量的X射线(E>2 keV),具有更大的探测深度,已经成为研究复杂材料体系的体性质,以及多层薄膜结构和纳米复合结构界面性质的重要分析工具。简要论述了HAXPES的主要特点及其发展现状,重点介绍其在半导体材料和器件研究中的典型应用,包含亚表面性质、极性判定、异质结能带结构、掺杂原子空间位置信息、器件层中界面态、介质层厚度评估等方面。随着硬X射线光源技术的不断发展,HAXPES的性能将进一步提高,其应用范围也会快速拓展,这将极大地促进功能材料的发展和应用。 展开更多
关键词 硬X射线光电子能谱(haxpes) 硬X射线光电子衍射 半导体材料和器件 能带结构 亚表面性质
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Low-Atomic-Number Nanometric Film Production Method for keV Electron Scattering Measurements
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作者 Mordechai Geller Itzhak Orion 《Journal of Chemistry and Chemical Engineering》 2016年第5期221-229,共9页
Attenuating mediums, targets and barriers made of submicronic layers with low average atomic number (low Z) and minimal electronic density that reduces the elastic scattering and absorption of radiation are required... Attenuating mediums, targets and barriers made of submicronic layers with low average atomic number (low Z) and minimal electronic density that reduces the elastic scattering and absorption of radiation are required for many applications. This work describes the development and characterization of submicronic Lexan (Polycarbonate) polymer foils with low Z for two new electron inelastic mean free path assessment methods. Lexan layers with thicknesses of 120 nm to 240 nm were developed and fabricated using spin coating. The submicronic layers were characterized by AFM and CSI for thickness, roughness and levelness. Roughness was found to be 1.0-2.4 nrn rms, and the change in total thickness was within + 7.5%. The results of total current measurements using 177 nm Lexan foil irradiated under an SEM electron beam were compared to those for a similar polymer foil. The first step of a wide spectrum method experiment was performed at the ESRF using Lexan submicronic layers on a silicon substrate. The signal peak and the multiple inelastic scattering peak of the Lexan spectrum was similar to those previously measured on carbon films. This study supported the suitability of the developed Lexan films for electron scattering measurements. 展开更多
关键词 haxpes SCATTERING layer SEM spin-coating.
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Hard X-ray Photoelectron Spectroscopy Study of Electron Spectral Structure beyond the Known Signal Electron Peak
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作者 Alon Givon Eitan Tiferet +4 位作者 German R. Castro Juan Rubio-Zuazo Erez Golan Ilan Yaar ItzhakOrion 《Journal of Chemistry and Chemical Engineering》 2013年第7期601-605,共5页
HAXPES (hard X-ray photoelectron spectroscopy) is a powerful emerging instrument in surface analysis. It extended the photoelectron energy range up to 15,000 eV and opened the possibility to study much thicker films... HAXPES (hard X-ray photoelectron spectroscopy) is a powerful emerging instrument in surface analysis. It extended the photoelectron energy range up to 15,000 eV and opened the possibility to study much thicker films, buried layers and bulk electronic properties. In order to study these features, data for the electron IMFP (inelastic mean free path) at these energies is needed. To date, only calculated IMFP are available at energies above 5,000 eV and therefore experimental validation of these calculations are essential. In this paper, a new approach for using the HAXPES spectra is presented. This approach, treats the attenuated part of the electron spectrum as a whole to calculating the average electron energy loss. This average electron energy loss is the result of inelastic collisions in the material and hence, carry with it information about the electron transport poses. Carbon layers with thicknesses between 20 and 75 nanometer deposited over copper substrate were used to test this approach at the Spanish beam-line (Spline) in the ESRF (European synchrotron radiation facility). The measured results showed good agreement with the predictions of the multiple inelastic scattering theory. In addition, an algorithm for the experimental evaluation of electron IMFP, using the measured energy loss, is proposed. 展开更多
关键词 haxpes IMFP carbon synchrotron.
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