In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visibl...In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction device.At 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 nm.The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,respectively.Uniquely,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other heterojunctions.The excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate.It is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric measurements.The TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.展开更多
基金supported by National Natural Science Foundation of China(Nos.62027818,61874034,and 51861135105)Natural Science Foundation of Shanghai(No.18ZR1405000)Shanghai Science and Technology Innovation Program(No.19520711500).
文摘In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction device.At 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 nm.The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,respectively.Uniquely,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other heterojunctions.The excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate.It is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric measurements.The TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.
