Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the de...Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance are investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency （PCE） of 3.3% and All factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm^2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy （UV-vis）, dark current-voltage curve, atomic force microscopy （AFM）.展开更多
In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer...In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.展开更多
基金Supported by the National Basic Research Programme of China under Grant No 2002CB613405, and the National Natural Science Foundation of China under Grant Nos 50573024 and 50433030, the Key Project of the Ministry of Education of China （104208）, and the Natural Science Foundation of South China University of Technology （E5040910）.
文摘Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance are investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency （PCE） of 3.3% and All factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm^2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy （UV-vis）, dark current-voltage curve, atomic force microscopy （AFM）.
基金supported by the National Natural Science Foundation of China(Grant No.52164050,51762043,61764009,51974143)National Key R&D Program of China(No.2018YFC1901801,No.2018YFC1901805)+1 种基金Major Science and Technology Project of Yunnan Province(202202AB080010,2019ZE00703)Yunnan University“Double First-class”Construction Joint Special Project-major project(202201BF070001-018).
文摘In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells.
