This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material tra...This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS_(2) transistors utilizing a conventional Al_2O_(3) gate insulator by atomic layer deposition,HfS_(2) transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm^2/Vs to 0.75 cm^2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.展开更多
Hafnium disulfide(HfS2) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors ...Hafnium disulfide(HfS2) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS2 nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH3)(C2H5))4 and H2S as the reaction precursors. Selflimiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS2 nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS2 crystallinity, while causing crystallization of the mixed HfO2 above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS2 nanocrystals for electronic device or electrochemical applications.展开更多
为解决犹豫模糊集(hesitant fuzzy set,HFS)隶属度数值个数不一致的问题,讨论了现有数值延拓(numerical extending,NE)方法的局限性,提出基于Normative算子的HFS NE方法,在没有新息加入的条件下,依次选取现有HFS隶属度可能值的均值作为...为解决犹豫模糊集(hesitant fuzzy set,HFS)隶属度数值个数不一致的问题,讨论了现有数值延拓(numerical extending,NE)方法的局限性,提出基于Normative算子的HFS NE方法,在没有新息加入的条件下,依次选取现有HFS隶属度可能值的均值作为一个新的延拓隶属度,直至所有HFS隶属度个数相等为止,并基于有序加权平均(ordered weighted averaging,OWA)算子归纳隶属度统一方法。最后将所提出的方法应用到多传感器电子侦察情报的多属性决策问题中,基于改进的逼近理想解(technique for order preferences by similarity to ideal solution,TOPSIS-ε)法对各信源HFS属性判决进行多属性决策。仿真试验分析了距离、距离参数、属性权重对决策结果的影响,并详细对比和验证了新方法在HFS隶属度NE方面的稳定性和直观性。展开更多
The growth of reeds was impeded remarkably under a salinity of 15.0±3.4 g CI·L-1 in the first year of this experiment, recovered in the second year and then increased year-by-year afterward. The growth of re...The growth of reeds was impeded remarkably under a salinity of 15.0±3.4 g CI·L-1 in the first year of this experiment, recovered in the second year and then increased year-by-year afterward. The growth of reeds under a salinity of 9.3±1.9 g CI·Ll was much better than those under 15.0 ± 3.4 g CI·L1. The stress effect was significant for shoot extension but not for the quantity of shoots increase. The dense vegetation bed during the vegetation period （June-October） provided a high rate of evapotranspiration and water loss from HFs （horizontal subsurface flow constructed wetlands）, which made large contributions to reducing pollutant load. The HFs with die-back reeds in the non-vegetation periods （November-March） provided slight evapotranspiration and water loss and made less of a contribution to reducing pollutants removal compared to HFs with the dense vegetation bed in the vegetation periods. However, the HFs with die-back reeds in the non-vegetation periods had higher removal performance than the HF without reeds. This indicated that the rhizosphere of HFs with reeds might play important roles, such as that the microbes around rhizomes might have a higher amount of pollutant-removing microbe activity than those in the HF without reeds during the non-vegetation period.展开更多
In this paper, the author provides a representation of Italian public hospital facilitators （HFs） （clinics, regional or local community hospitals, and medical centers） by means of different types of networks. Movi...In this paper, the author provides a representation of Italian public hospital facilitators （HFs） （clinics, regional or local community hospitals, and medical centers） by means of different types of networks. Moving from the balance scorecards of HFs, the author has analyzed the representation of those data through the use of the minimum spanning tree （MST） and the planar maximally-filtered graph （PMFG）. This paper firstly examined the amount of information provided by the two networks and then run a sensitivity analysis of the networks by varying the elements of the balance scorecards to be considered. In this way, the author obtained a quite unusual representation of the overall economic situation of Italian HFs. Moreover, the author observed the emergence of patterns which in the author＇s opinion might help policy makers to realize a more efficient allocation of financial resources among the existing HFs.展开更多
基金Supported by the Japan Society for the Promotion of Science under Grant No JP25107004
文摘This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS_(2) transistors utilizing a conventional Al_2O_(3) gate insulator by atomic layer deposition,HfS_(2) transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm^2/Vs to 0.75 cm^2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200103)。
文摘Hafnium disulfide(HfS2) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS2 nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH3)(C2H5))4 and H2S as the reaction precursors. Selflimiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS2 nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS2 crystallinity, while causing crystallization of the mixed HfO2 above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS2 nanocrystals for electronic device or electrochemical applications.
文摘为解决犹豫模糊集(hesitant fuzzy set,HFS)隶属度数值个数不一致的问题,讨论了现有数值延拓(numerical extending,NE)方法的局限性,提出基于Normative算子的HFS NE方法,在没有新息加入的条件下,依次选取现有HFS隶属度可能值的均值作为一个新的延拓隶属度,直至所有HFS隶属度个数相等为止,并基于有序加权平均(ordered weighted averaging,OWA)算子归纳隶属度统一方法。最后将所提出的方法应用到多传感器电子侦察情报的多属性决策问题中,基于改进的逼近理想解(technique for order preferences by similarity to ideal solution,TOPSIS-ε)法对各信源HFS属性判决进行多属性决策。仿真试验分析了距离、距离参数、属性权重对决策结果的影响,并详细对比和验证了新方法在HFS隶属度NE方面的稳定性和直观性。
文摘The growth of reeds was impeded remarkably under a salinity of 15.0±3.4 g CI·L-1 in the first year of this experiment, recovered in the second year and then increased year-by-year afterward. The growth of reeds under a salinity of 9.3±1.9 g CI·Ll was much better than those under 15.0 ± 3.4 g CI·L1. The stress effect was significant for shoot extension but not for the quantity of shoots increase. The dense vegetation bed during the vegetation period （June-October） provided a high rate of evapotranspiration and water loss from HFs （horizontal subsurface flow constructed wetlands）, which made large contributions to reducing pollutant load. The HFs with die-back reeds in the non-vegetation periods （November-March） provided slight evapotranspiration and water loss and made less of a contribution to reducing pollutants removal compared to HFs with the dense vegetation bed in the vegetation periods. However, the HFs with die-back reeds in the non-vegetation periods had higher removal performance than the HF without reeds. This indicated that the rhizosphere of HFs with reeds might play important roles, such as that the microbes around rhizomes might have a higher amount of pollutant-removing microbe activity than those in the HF without reeds during the non-vegetation period.
文摘In this paper, the author provides a representation of Italian public hospital facilitators （HFs） （clinics, regional or local community hospitals, and medical centers） by means of different types of networks. Moving from the balance scorecards of HFs, the author has analyzed the representation of those data through the use of the minimum spanning tree （MST） and the planar maximally-filtered graph （PMFG）. This paper firstly examined the amount of information provided by the two networks and then run a sensitivity analysis of the networks by varying the elements of the balance scorecards to be considered. In this way, the author obtained a quite unusual representation of the overall economic situation of Italian HFs. Moreover, the author observed the emergence of patterns which in the author＇s opinion might help policy makers to realize a more efficient allocation of financial resources among the existing HFs.
