The recent emerging progress of quantum dot ink(QD-ink)has overcome the complexity of multiple-step colloidal QD(CQD)film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl(O...The recent emerging progress of quantum dot ink(QD-ink)has overcome the complexity of multiple-step colloidal QD(CQD)film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl(OH)ligands induced from synthesis procedure have not been completely removed.Here,a halide ligand additive strategy was devised to optimize QD-ink process.It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances.The corresponding power conversion efficiency of this optimized device reached 10.78%.(The control device was 9.56%.)Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.展开更多
基金financially supported by National Natural Science Foundation of China (61874165,51761145048,and 21833009)the Foundation of Shenzhen Science and Technology Innovation Committee (JCYJ20170413113645633)+2 种基金Major State Basic Research Development Program of China (2016YFB0700702)the Guangdong-Hong Kong joint innovation project (2016A050503012)Guangdong Natural Science Funds for Distinguished Young Scholars (2015A030306044)
文摘The recent emerging progress of quantum dot ink(QD-ink)has overcome the complexity of multiple-step colloidal QD(CQD)film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl(OH)ligands induced from synthesis procedure have not been completely removed.Here,a halide ligand additive strategy was devised to optimize QD-ink process.It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances.The corresponding power conversion efficiency of this optimized device reached 10.78%.(The control device was 9.56%.)Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.
