A low power and low phase noise phase-locked loop（PLL） design for low voltage（0.8 V） applications is presented.The voltage controlled oscillator（VCO） operates from a 0.5 V voltage supply,while the other blocks o...A low power and low phase noise phase-locked loop（PLL） design for low voltage（0.8 V） applications is presented.The voltage controlled oscillator（VCO） operates from a 0.5 V voltage supply,while the other blocks operate from a 0.8 V supply.A differential NMOS-only topology is adopted for the oscillator,a modified precharge topology is applied in the phase-frequency detector（PFD）,and a new feedback structure is utilized in the charge pump（CP） for ultra-low voltage applications.The divider adopts the extended true single phase clock DFF in order to operate in the high frequency region and save circuit area and power.In addition,several novel design techniques,such as removing the tail current source,are demonstrated to cut down the phase noise.Implemented in the SMIC 0.13μm RF CMOS process and operated at 0.8 V supply voltage,the PLL measures a phase noise of-112.4 dBc/Hz at an offset frequency of 1 MHz from the carrier and a frequency range of 3.166-3.383 GHz.The improved PFD and the novel CP dissipate 0.39 mW power from a 0.8 V supply.The occupied chip area of the PFD and CP is 100×100μm^2.The chip occupies 0.63 mm^2,and draws less than 6.54 mW from a 0.8 V supply.展开更多
This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation...This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation（WIA） applications. Two techniques are proposed to achieve the wide range. First, a 1.4–2.2 GHz ultralow gain voltage-controlled oscillator（VCO） is adopted by using 128 tuning curves. Second, a selectable I/Q divider is employed to divide the VCO frequency by 2 or 3 or 4 or 6. Besides, a phase-switching prescaler is proposed to lower PLL phase noise, a self-calibrated charge pump is used to suppress spur, and a detect-boosting phase frequency detector is adopted to shorten settling time. With a 200 k Hz loop bandwidth, lowest measured phase noise is 106 dBc/Hz at a 10 k Hz offset and 131 dBc/Hz at a 1 MHz offset. Fabricated in the TSMC 0.18 μm CMOS process, the synthesizer occupies a chip area of 1.2 mm^2, consumes only 15 m W from the 1.8 V power supply,and settles within 13.2 s. The synthesizer is optimized for the WIA applications, but can also be used for other short-range wireless communications, such as 433, 868, 916 MHz ISM band applications.展开更多
介绍了一种工作在X波段的低相位噪声、100%国产化频率源的工程设计方法。该方法采用锁相环(PLL)经典电路产生频率信号。分析了PLL相位噪声理论模型,对比了相同封装的国产PLL芯片和进口PLL芯片两种方案,并对实物进行了测试。试验结果表明...介绍了一种工作在X波段的低相位噪声、100%国产化频率源的工程设计方法。该方法采用锁相环(PLL)经典电路产生频率信号。分析了PLL相位噪声理论模型,对比了相同封装的国产PLL芯片和进口PLL芯片两种方案,并对实物进行了测试。试验结果表明,该频率源可稳定输出频率为8.8 GHz的信号。采用国产PLL芯片制作的频率源相位噪声优于采用进口PLL芯片制作的频率源1~2 d B,约为-101 dBc/Hz@1 kHz,-110 d Bc/Hz@100 kHz。展开更多
高性能的频率综合器会直接影响到雷达、通信、遥测遥控、电子对抗等电子系统的性能,其主要技术指标包括低相噪、低杂散、小步进、宽频带等.本文基于某工程的实际需求,根据锁相合成技术,采用HMC983+HMC984套片研制了一款S频段步进为100 H...高性能的频率综合器会直接影响到雷达、通信、遥测遥控、电子对抗等电子系统的性能,其主要技术指标包括低相噪、低杂散、小步进、宽频带等.本文基于某工程的实际需求,根据锁相合成技术,采用HMC983+HMC984套片研制了一款S频段步进为100 Hz的频率综合器,针对设计中小数分频杂散较高的特点,提出了一种可变参考频率的方案,通过避开鉴相频率的整数点有效降低了小数分频中的杂散,同时,鉴相频率的提高使得N值降低,相位噪声恶化减小.测试结果表明,随着鉴相频率的提高,值降低,相位噪声恶化减小,样机杂散指标最差点为72 d Bc.展开更多
文摘A low power and low phase noise phase-locked loop（PLL） design for low voltage（0.8 V） applications is presented.The voltage controlled oscillator（VCO） operates from a 0.5 V voltage supply,while the other blocks operate from a 0.8 V supply.A differential NMOS-only topology is adopted for the oscillator,a modified precharge topology is applied in the phase-frequency detector（PFD）,and a new feedback structure is utilized in the charge pump（CP） for ultra-low voltage applications.The divider adopts the extended true single phase clock DFF in order to operate in the high frequency region and save circuit area and power.In addition,several novel design techniques,such as removing the tail current source,are demonstrated to cut down the phase noise.Implemented in the SMIC 0.13μm RF CMOS process and operated at 0.8 V supply voltage,the PLL measures a phase noise of-112.4 dBc/Hz at an offset frequency of 1 MHz from the carrier and a frequency range of 3.166-3.383 GHz.The improved PFD and the novel CP dissipate 0.39 mW power from a 0.8 V supply.The occupied chip area of the PFD and CP is 100×100μm^2.The chip occupies 0.63 mm^2,and draws less than 6.54 mW from a 0.8 V supply.
基金supported by the National High Technology Research and Development Program of China(No.2011AA040102)
文摘This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation（WIA） applications. Two techniques are proposed to achieve the wide range. First, a 1.4–2.2 GHz ultralow gain voltage-controlled oscillator（VCO） is adopted by using 128 tuning curves. Second, a selectable I/Q divider is employed to divide the VCO frequency by 2 or 3 or 4 or 6. Besides, a phase-switching prescaler is proposed to lower PLL phase noise, a self-calibrated charge pump is used to suppress spur, and a detect-boosting phase frequency detector is adopted to shorten settling time. With a 200 k Hz loop bandwidth, lowest measured phase noise is 106 dBc/Hz at a 10 k Hz offset and 131 dBc/Hz at a 1 MHz offset. Fabricated in the TSMC 0.18 μm CMOS process, the synthesizer occupies a chip area of 1.2 mm^2, consumes only 15 m W from the 1.8 V power supply,and settles within 13.2 s. The synthesizer is optimized for the WIA applications, but can also be used for other short-range wireless communications, such as 433, 868, 916 MHz ISM band applications.
文摘介绍了一种工作在X波段的低相位噪声、100%国产化频率源的工程设计方法。该方法采用锁相环(PLL)经典电路产生频率信号。分析了PLL相位噪声理论模型,对比了相同封装的国产PLL芯片和进口PLL芯片两种方案,并对实物进行了测试。试验结果表明,该频率源可稳定输出频率为8.8 GHz的信号。采用国产PLL芯片制作的频率源相位噪声优于采用进口PLL芯片制作的频率源1~2 d B,约为-101 dBc/Hz@1 kHz,-110 d Bc/Hz@100 kHz。
文摘高性能的频率综合器会直接影响到雷达、通信、遥测遥控、电子对抗等电子系统的性能,其主要技术指标包括低相噪、低杂散、小步进、宽频带等.本文基于某工程的实际需求,根据锁相合成技术,采用HMC983+HMC984套片研制了一款S频段步进为100 Hz的频率综合器,针对设计中小数分频杂散较高的特点,提出了一种可变参考频率的方案,通过避开鉴相频率的整数点有效降低了小数分频中的杂散,同时,鉴相频率的提高使得N值降低,相位噪声恶化减小.测试结果表明,随着鉴相频率的提高,值降低,相位噪声恶化减小,样机杂散指标最差点为72 d Bc.
