Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The in...Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details.展开更多
USB-OTG(USB-On The Go)技术是USB2.0规范的重要补充,它实现了在无PC机参与的情况下,两个便携式设备直接互连通信,使USB设备摆脱了对PC的依赖。文中主要介绍了USB-OTG技术的工作原理、芯片类型及CSC3800型USB-OTG功能的应用。为了提高...USB-OTG(USB-On The Go)技术是USB2.0规范的重要补充,它实现了在无PC机参与的情况下,两个便携式设备直接互连通信,使USB设备摆脱了对PC的依赖。文中主要介绍了USB-OTG技术的工作原理、芯片类型及CSC3800型USB-OTG功能的应用。为了提高便携设备之间的互联性,研究这样一种新技术是十分必要的,同时也具有较高的市场价值。展开更多
基金supported by the European Union within European Regional Development Fund,through grant Innovative Economy (POIG.01.01.02-00-008/08)
文摘Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details.
文摘USB-OTG(USB-On The Go)技术是USB2.0规范的重要补充,它实现了在无PC机参与的情况下,两个便携式设备直接互连通信,使USB设备摆脱了对PC的依赖。文中主要介绍了USB-OTG技术的工作原理、芯片类型及CSC3800型USB-OTG功能的应用。为了提高便携设备之间的互联性,研究这样一种新技术是十分必要的,同时也具有较高的市场价值。