The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradati...The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.展开更多
The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. Th...The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET's degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET's and PMOSFET's are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.展开更多
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.展开更多
We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （...We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.展开更多
Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage...Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.展开更多
A measuring technique based on the CP（charge pumping）method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the g...A measuring technique based on the CP（charge pumping）method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS in CP measurements is investigated in detail.At the same time,the impacts of different reverse voltage applied on the source and drain electrodes and of the gate pulse shape on the CP curve change in N-LDMOS are also proposed and analyzed.The conclusions give guidance on measuring the density of interface states with experimental instructions and offer theoretic instructions for analyzing CP curves in high voltage N-LDMOS more accurately.展开更多
We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irrad...We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.展开更多
An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventi...An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.展开更多
Surface defect passivation of perovskite films through chemical interaction between specific functional groups and defects has been proven to be an effective technique for enhancing the performance and stability of pe...Surface defect passivation of perovskite films through chemical interaction between specific functional groups and defects has been proven to be an effective technique for enhancing the performance and stability of perovskite solar cells(PSCs).However,an in-depth understanding of how these passivation materials affect the intrinsic nature of charge-carrier transfer kinetics in PSCs remains shielded so far.Herein,we have designed two naphthalimide-based perovskite surface passivators having electronwithdrawing(-CF_(3),NSF)or electron-donating(-CH_(3),NSC)substituents for use in PSCs.Transient absorption spectroscopy(TA)measurements confirmed how the electron-withdrawing and electron-donating groups can efficiently turn the hot carriers(HCs)cooling and injection,and interface recombination in the device.We found that NSC-passivated perovskite samples exhibit faster hot-carriers(HCs)injection from the perovskite layer into carrier transport layers before cooling to the crystal lattice compared with the NSF-based and control ones with the order:NSC>NSF>control.Fast HCs injection is advantageous to minimize the charge-carriers recombination and improve PSCs performance.The carrier lifetime in NSCtreated device measured by nanosecond TA exhibits nearly~2 times longer than that of NSF-based device,which demonstrates the decreased charge-carrier recombination in NSC-treated device.As expected,the power conversion efficiency(PCE)of the NSC-treated PSCs is improved to 23.04%compared with that of the device treated with NSF(21.81%).Our findings provide invaluable guide for developing highly efficient passivators to further boost PSCs photovoltaic performance.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11475255,U1532261 and 11505282
文摘The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
基金Supported by the National Advance Research Foundation of China.(No.9825741)
文摘The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET's degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET's and PMOSFET's are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.
基金special funds of major state basic research projects (G20000365)
文摘The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.
文摘We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.
文摘Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.
基金supported by the Jiangsu Provincial Natural Science Foundation(No.BK2008287)
文摘A measuring technique based on the CP（charge pumping）method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS in CP measurements is investigated in detail.At the same time,the impacts of different reverse voltage applied on the source and drain electrodes and of the gate pulse shape on the CP curve change in N-LDMOS are also proposed and analyzed.The conclusions give guidance on measuring the density of interface states with experimental instructions and offer theoretic instructions for analyzing CP curves in high voltage N-LDMOS more accurately.
文摘We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.
基金supported by the PhD Program Foundation of the Ministry of Education of China(No.20110185110003)
文摘An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.
基金the National Natural Science Foundation of China(22065038)the Key Project of Natural Science Foundation of Yunnan(KC10110419)+2 种基金the High-Level Talents Introduction in Yunnan Province(C619300A010)the Fund for Excellent Young Scholars of Yunnan(K264202006820)the support from the Yunnan University Research Innovation Found for Graduate Students(2021Z095)。
文摘Surface defect passivation of perovskite films through chemical interaction between specific functional groups and defects has been proven to be an effective technique for enhancing the performance and stability of perovskite solar cells(PSCs).However,an in-depth understanding of how these passivation materials affect the intrinsic nature of charge-carrier transfer kinetics in PSCs remains shielded so far.Herein,we have designed two naphthalimide-based perovskite surface passivators having electronwithdrawing(-CF_(3),NSF)or electron-donating(-CH_(3),NSC)substituents for use in PSCs.Transient absorption spectroscopy(TA)measurements confirmed how the electron-withdrawing and electron-donating groups can efficiently turn the hot carriers(HCs)cooling and injection,and interface recombination in the device.We found that NSC-passivated perovskite samples exhibit faster hot-carriers(HCs)injection from the perovskite layer into carrier transport layers before cooling to the crystal lattice compared with the NSF-based and control ones with the order:NSC>NSF>control.Fast HCs injection is advantageous to minimize the charge-carriers recombination and improve PSCs performance.The carrier lifetime in NSCtreated device measured by nanosecond TA exhibits nearly~2 times longer than that of NSF-based device,which demonstrates the decreased charge-carrier recombination in NSC-treated device.As expected,the power conversion efficiency(PCE)of the NSC-treated PSCs is improved to 23.04%compared with that of the device treated with NSF(21.81%).Our findings provide invaluable guide for developing highly efficient passivators to further boost PSCs photovoltaic performance.
