Theoretical research on electron beam modulation in a field-emission cold cathode electron gun

In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.

A novel double dielectric barrier discharge reactor with high field emission and secondary electron emission for toluene abatement

Dielectric barrier discharge(DBD)has been extensively investigated in the fields of environment and energy,whereas its practical implementation is still limited due to its unsatisfactory energy efficiency.In order to improve the energy efficiency of DBD,a novel double dielectric barrier discharge(NDDBD)reactor with high field emission and secondary electron emission was developed and compared with traditional DDBD(TDDBD)configuration.Firstly,the discharge characteristics of the two DDBD reactors were analyzed.Compared to TDDBD,the NDDBD reactor exhibited much stronger discharge intensity,higher transferred charge,dissipated power and gas temperature due to the effective utilization of cathode field emission and secondary electron emission.Subsequently,toluene abatement performance of the two reactors was evaluated.The toluene decomposition efficiency and mineralization rate of NDDBD were much higher than that of TDDBD,which were 86.44%-100%versus 28.17%-80.48%and 17.16%-43.42%versus 7.17%-16.44%at 2.17-15.12 W and 1.24-4.90 W respectively.NDDBD also exhibited higher energy yield than TDDBD,whereas the overall energy constant k_(overall)of the two reactors were similar.Finally,plausible toluene decomposition pathway in TDDBD and NDDBD was suggested based on organic intermediates that generated from toluene degradation.The finding of this study is expected to provide reference for the design and optimization of DBD reactor for volatile organic compounds control and other applications.

Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.

Photo-enhanced field electron emission of cadmium sulfide nanowires

The response of field electron emission of cadmium sulfide (CdS) nanowires (NWs) to visible light has been investigated.It is found that,upon light illumination,the turn-on voltage drops,emission current increases obviously,and the Fowler-Nordheim behavior deviates from a straight line.A process of field emission coupled with semiconducting properties of CdS NWs is proposed.Photon-excited electron transition from the valence band to the conductance band of CdS nanowires increases the quantity of emitting electrons,and the photoemission decreases the effective work function of CdS emitters,which largely enhances the field emission performance.The response of field emission of CdS NWs to light illumination suggests an approach for tuning field emission of semiconductor emitters.

Electron Field Emission from Patterned Porous Silicon Film

Patterned porous silicon （PS） films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy （SEM）,X-ray diffraction（XRD）,and atomic force microscopy （AFM）.The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.

Field Emission from a Mixture of Amorphous Carbon and Carbon Nanotubes Films

A mixture of amorphous carbon and carbon nanotubes films was synthesized on stainless steel plates by a micro- wave plasma enhanced chemical vapor deposition system. The source gases were hydrogen and methane with flow rates of 100 and 16sccm,respectively,with a total pressure of 5.0kPa. The surface morphology and the structure of the films were characterized by field emission scanning electron microscopy （SEM） and Raman scattering spectroscopy. Field emission properties of as-deposited film were measured in a vacuum room below 5 ×10^ 5 Pa. The experimental results show that the initial turn-on field is 0. 9V/μm; The current density is 4.0mA/cm2 and the emission sites are dense and uniform at an electric field of 3.7V/μm. These results indicate that such a mixture of amorphous carbon and carbon nanotubes films is a promising material for field emission applications.

Initiation of vacuum breakdown and failure mechanism of the carbon nanotube during thermal field emission

The carbon nanotube （CNT）-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission cathode. The falling off of CNT from the substrate, which frequently appears in experiments, restricts its application. In addition, the onset time of vacuum breakdown limits the performance of the high-power explosive-emission-cathode-based diode. In this paper, the characteristics of the CNT, electric field strength, contact resistance and the kind of substrate material are varied to study the parameter effects on the onset time of vacuum breakdown and failure mechanism of the CNT by using the finite element method.

Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

In this paper,we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition.The diamond films consisting of micro-grains(nano-grains) were realized with low(high) boron source flow rate during the growth processes.The transition of micro-grains to nano-grains is speculated to be strongly(weekly) related with the boron(nitrogen) flow rate.The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate.The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples,which are related to the combined phase composition,boron doping level and texture structure.There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

Field Emission of SiCN Thin Films Bombarded by Ar^+ Ions

SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P\|type Si (1 0 0) wafers using C 2 H 4 , SiH 4 and N 2 as raw materials. In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar + ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar + bombardment were studied in the super vacuum environment of 10 -6 Pa. It was showed that the turn\|on field (defined as the point where the current\|voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm 2 . The composition before and after Ar + bombardment was compared using X\|ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar + .

NEW METHOD FOR MEASURING SECONDARY ELECTRON EMISSION OF THERMIONIC CATHODE AND ITS APPLICATION

By using correlation-detection technique and improving structure of the test tube,the background noise of thermionic-electrons and space charge effect are restrained.The sec-ondary emission coefficient δ of thermionic cathode at high temperature has been studied.Theδ of impregnated scandate cathodes increases exponentially with increasing temperature at lowenergy and current of the bombardment electrons;at high energy or current of the bombardmentelectrons the temperature has little effect on δ.The research shows that an enhanced thermionicemission occurred when the cathode works at high temperature and under electron bombardment.These phenomena are discussed in terms of “internal field model”.

Synthesis of ZnO films with a special texture and enhanced field emission properties

ZnO films with special textures ave fabricated on Mo-coated Al2O3 ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density -0.11 mA/cm2 at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.

Electron Emission of Graphene-Diamond Hybrid Films Using Paraffin Wax as Diamond Seeding Source

We present a scalable, reproducible and economic process for the fabrication of diamond and diamond-graphene hybrid films using paraffin wax as a seeding source for diamond. The films were characterized using Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS). Raman spectra show the characteristic band of diamond at 1332 cm-1 and the D, G, and 2D bands of graphene at 1360, 1582 and 2709 cm-1, respectively. Electron microscopy confirms the microcrystalline nature of the diamond films with crystal size in the range of 0.5 μm to 1.0 μm, and the hybrid film consists of microcrystalline diamond attached to thin, semi-transparent graphene flakes. The graphene-diamond hybrid films exhibit a turn-on field of about 3.6 V/μm with a prolonged current stability of at least 135 h.

Simulation of Secondary Electron and Backscattered Electron Emission in A6 Relativistic Magnetron Driven by Different Cathode

Prticle-in-cell（PIC） simulations demonstrated that,when the relativistic magnetron with diffraction output（MDO） is applied with a 410 kV voltage pulse,or when the relativistic magnetron with radial output is applied with a 350 kV voltage pulse,electrons emitted from the cathode with high energy will strike the anode block wall.The emitted secondary electrons and backscattered electrons affect the interaction between electrons and RF fields induced by the operating modes,which decreases the output power in the radial output relativistic magnetron by about 15%（10%for the axial output relativistic magnetron）,decreases the anode current by about 5%（5%for the axial output relativistic magnetron）,and leads to a decrease of electronic efficiency by 8%（6%for the axial output relativistic magnetron）.The peak value of the current formed by secondary and backscattered current equals nearly half of the amplitude of the anode current,which may help the growth of parasitic modes when the applied magnetic field is near the critical magnetic field separating neighboring modes.Thus,mode competition becomes more serious.

Morphology and Field Emission of ZnO Nanomaterials at Different Positions

By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has the lowest turn-on field, the highest current density, and the highest emission efficiency due to its good contact with the substrate and relatively weak field shielding effect. Experiments show that the morphology and orientation of one-dimensional ZnO nanomaterials have a great influence on its conduction field and emission current density, and the nanoarrays also contribute to electron emission. The research results have a certain reference value for the application of ZnO nanorod arrays as cathode materials for field emission devices.

Field electron emission of diamond films on nanocrystalline diamond coating by CVD method

The preparation process, structure feature and field electron emission characteristic of diamond films on nanocyrstalline diamond coating by the CVD method were studied. The field electron emission measurements on the samples showed that the diamond films have lower turn-on voltage and higher field emission current density. A further detailed theory explanation to the results was given.

Effect of interface layers on electron field emission properties of amorphous diamond films

Hydrogen-free high sp^3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm^2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.

Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters

In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition（CVD） over a wide range of experimental parameters. The effects of the microwave power,CH;/H;ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope（SEM）, X-ray diffraction（XRD）, Raman spectroscopy and X-ray photoelectron spectroscopy（XPS）. A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH;/H;levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However,diamond film is deteriorated at high CH;/H;ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH;concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N;or Ar,which is different from other reports. This composite structure has an excellent measured sheet resistance of 10-100 Ω/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission（EFE） properties with a low turn-on field of 2.17 V/μm and β= 3160, therefore it could be a promising alternative in field emission applications.

Metallic phases of Dong Ujimqin mesosiderite:A field emission scanning electron microscope study

The microstructure of Fe-Ni metallic phases in Dong Ujimqin mesosiderite was studied using the field emission SEM. Taenite is characterized by a zoned structure, consisting of outer clear taenite and inner cloudy zone (CZ). CZ has a typical 'island-honeycomb' microstructure. The average size of the island phase is about 358 nm, suggesting a cooling rate of～0.5℃/Ma at low temperature (【400℃). The Ni concentration profiles across kamacite and zoned taenite were also measured by electron probe microscope analysis (EPMA). Formation of the Fe-Ni metallic phases, microstructure in Dong Ujimqin mesosiderite was discussed based on the new low-temperature Fe-Ni phase diagram.

High sp^3 content hydrogen-free amorphous diamond: an excellent electron field emission material

Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp3 content (>90%) amorphous diamond (a-D) film deposited on heavily doped (ρ<0.01ω·cm) n-type monocrystalline Si (111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be about several mA/cm2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10–12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp3 content of the a-D film.