The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （...The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11475229the College Students Practice Innovative Training Program of Nanjing University of Information Science&Technology under Grant No 201610300042
文摘The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
