Exhaustive review of acceleration strategies for Monte Carlo simulations in photon transit

Monte Carlo simulation techniques have become the quintessence and a pivotal nexus of inquiry in the realm of simulating photon movement within biological fabrics.Through the stochastic sampling of tissue archetypes delineated by explicit optical characteristics,Monte Carlo simulations possess the theoretical capacity to render unparalleled accuracy in the depiction of exceedingly intricate phenomena.Nonetheless,the quintessential challenge associated with Monte Carlo simulation methodologies resides in their extended computational duration,which significantly impedes the refinement of their precision.Consequently,this discourse is specifically dedicated to exploring innovations in strategies and technologies aimed at expediting Monte Carlo simulations.It delves into the foundational concepts of various acceleration tactics,evaluates these strategies concerning their speed,accuracy,and practicality,and amalgamates a comprehensive overview and critique of acceleration methodologies for Monte Carlo simulations.Ultimately,the discourse envisages prospective trajectories for the employment of Monte Carlo techniques within the domain of tissue optics.

Full Band Monte Carlo Simulation of Electron Transport in Ge with Anisotropic Scattering Process

The electron transport properties in Ge are calculated by full band Monte Carlo technique with anisotropic scattering consideration.The calculation procedures are as follows:the full band structure is calculated by nonlocal empirical pseudopotential approach;the relative value of density of state (DOS) is computed by counting the number of states located in a certain region of the energy;the phonon dispersion curve is obtained from an adiabatic bond charge model;the electron phonon scattering rates are approximated by the nonparabolic model derived from Fermi’s golden rule at low energy region and scaled by DOS at higher energy region;the energy and momentum conservations are employed for choosing the final state after scattering.The validity of this Monte Carlo simulator and the physical models that are used is fully confirmed by comparing the program output to experimental results listed in references.As this Monte Carlo model can accurately reproduce the velocity and energy characteristics of electrons in Ge and the DOS scaled scattering rate can significantly reduce the computational cost for scattering rates,this approach is suitable for device simulation.

Sample size adaptive strategy for time-dependent Monte Carlo particle transport simulation

When multiphysics coupling calculations contain time-dependent Monte Carlo particle transport simulations, these simulations often account for the largest part of the calculation time, which is insufferable in certain important cases. This study proposes an adaptive strategy for automatically adjusting the sample size to fulfil more reasonable simulations. This is realized based on an extension of the Shannon entropy concept and is essentially different from the popular methods in timeindependent Monte Carlo particle transport simulations, such as controlling the sample size according to the relative error of a target tally or by experience. The results of the two models show that this strategy can yield almost similar results while significantly reducing the calculation time. Considering the efficiency, the sample size should not be increased blindly if the efficiency cannot be enhanced further. The strategy proposed herein satisfies this requirement.

LIGHT ION REFLECTION STUDIED BY MONTE CARLO SIMULATION AND TRANSPORT THEORY

The reflection of light ions, such as H+,3He+ and 4He+, with energies of 0.1- 10 keV, from Cu and Ni surface has been studied by Monte Carlo simulation and transport theory. The Monte Carlo simulation gives the detail energy spectra for the reflected particles and their angular distribution for different incident angles. It shows that the reflected particle energy spectra can be approximately described by an analytical formula for the whole energy range, all the incident angles and different ion- target combination studied here. The reflected particle energy vs its average reflection angle to the surface normal can almost be expressed by a universal curve for all cases studied here. The reflection energy spectra are used for the calculation of the reflection coefficient by transport theory including the realistic surface correction. The present work is compared with both experimental measurement and other simulation codes.

Steady-state and transient electronic transport properties of β-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures:An ensemble Monte Carlo simulation

The steady-state and transient electron transport properties ofβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures were investigated by Monte Carlo simulation with the classic three-valley model.In particular,the electronic band structures were acquired by first-principles calculations,which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas(2DEG),and the quantization effect was considered in theΓvalley with the five lowest subbands.Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger–Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered.The simulated low-field electron mobilities agree well with the experimental results,thus confirming the effectiveness of our models.The results show that the room temperature electron mobility of theβ-(Al_(0.188)Ga_(0.812))_(2)O_(3)/Ga_(2)O_(3)heterostructure at 10 k V·cm^(-1)is approximately153.669 cm^(2)·V^(-1)·s^(-1),and polar optical phonon scattering would have a significant impact on the mobility properties at this time.The region of negative differential mobility,overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it.This work offers significant parameters for theβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructure that may benefit the design of high-performanceβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructure-based devices.

GRAPHICS PROCESSING UNIT CLUSTER ACCELERATED MONTE CARLO SIMULATION OF PHOTON TRANSPORT IN MULTI-LAYERED TISSUES

We present a graphics processing unit(GPU)cluster-based Monte Carlo simulation of photon transport in multi-layered tissues.The cluster is composed of multiple computing nodes in a local area network where each node is a personal computer equipped with one or several GPU(s)for parallel computing.In this study,the MPI(Message Passing Interface),the OpenMP(Open Multi-Processing)and the CUDA(Compute Unified Device Architecture)technologies are employed to develop the program.It is demonstrated that this designing runs roughly N times faster than that using single GPU when the GPUs within the cluster are of the same type,where N is the total number of the GPUs within the cluster.

Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, respectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

Comparison Between Three-Valley Model and Full Band Model in Monte Carlo Simulation of Bulk Wurtzite GaN

The Monte Carlo simulators with the three valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN).Comparison of the results based on the two models is made.The results based on both models are basically the same at the lower field region,but exhibit some differences at the higher field region.The electron average energy exhibits obvious difference at the high field region between the two models.This difference further causes several other differences of GaN properties,such as the drift velocity versus field characteristics,the repopulation.Because of the complicated energy band structures at the high energy region for wurtzite GaN,the analytical band structures in the three valley model can not cover all properties of the band structures of wurtzite GaN,so the results based on the full band Monte Carlo model should be more exact.

Monte Carlo Simulation of Laser-Ablated Particle Splitting Dynamic in a Low Pressure Inert Gas

A Monte Carlo simulation method with an instantaneous density dependent meanfree-path of the ablated particles and the Ar gas is developed for investigating the transport dynamics of the laser-ablated particles in a low pressure inert gas.The ablated-particle density and velocity distributions are analyzed.The force distributions acting on the ablated particles are investigated.The influence of the substrate on the ablated-particle velocity distribution and the force distribution acting on the ablated particles are discussed.The Monte Carlo simulation results approximately agree with the experimental data at the pressure of 8 Pa to 17 Pa.This is helpful to investigate the gas phase nucleation and growth mechanism of nanoparticles.

Finite Size Effect in Path Integral Monte Carlo Simulations of ~4He Systems

Path integral Monte Carlo （PIMC） simulations are a powerful computational method to study interacting quantum systems at finite temperatures. In this work, PIMC has been applied to study the finite size effect of the simulated systems of ^4He. We determine the energy as a function of temperature at saturated-vapor-pressure （SVP） conditions in the temperature range of T ∈ [1.0 K,4.0 K], and the equation of state （EOS） in the grmmd state For systems consisted of 32, 64 and 128 ^4He atoms, respectively, We find that the energy at SVP is influenced significantly by the size of the simulated system in the temperature range of T ∈ [2.1 K, 3.0 K] and the larger the system is, the better results are obtained in comparison with the experimental values; while the EOS appeared to be unrelated to it.

A Novel“Monte Carlo”Simulator Aimed to Model High Energy Up-to-date Radiation Sources and Radiation Transport inside Matter

We have faced the challenge of developing a tool devoted to simulate the transport of photons and accelerated particles(ionizing radiation entities)inside matter,where the choice of transporting medium shall be free for the user and non-homogeneities shall be modeled and managed.The solution has been a project that exploits fully statistical Monte Carlo approach,employing a digitalizing board to produce random samples.The system heredities many concepts from electronics devices simulators,but it finds different applications and we present one of them for effectiveness demonstration.

Band Structure and Electron Transport of Bulk Based on an Ensemble Monte Carlo Calculation

The current demand growth of new components capable of operating at high power, high frequency, high temperatures and convergence towards miniaturization has lead to the development of new fields of nanotechnology based on II-VI semiconductor Interest in nanostructure：s based on II-VI semiconductor narrow gap containing mercury （such as super lattices HgTe/CdTe） was due to their advantages over alloys with cadmium telluride Mercury （MCT： HgCdTe）. The ternary alloy is a semiconductor band-gap direct, in that work the main interest is about the ternary compound. The results obtained are very satisfactory, they are compared with experimental results, and are in good agreement. These results are very promising and open new perspectives for the realization of solar cells and applications in the field of sensors.

中子大气传输特性的Monte Carlo模拟

用MonteCarlo方法计算了中子通过大气传输到不同高度轨道探测器的中子注量和能谱。研究结果表明:到达不同轨道的中子的能谱结构相同,因此中子能谱的基本结构在大气传输过程中保持不变;在保持能谱基本结构不变的前提下,随中子的传输,其低能中子份额在缓慢增大,高能中子份额在缓慢减小;大气中的中子注量超过了自由空间中相应的中子注量;能谱及注量的研究结果同时证明了中子的大气传输主要受散射机制而不是吸收机制所控制。

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H 和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为1 0×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近3 3×107cm·s-1,6H Sic接近3 0×107cm·s-1.

基于Monte Carlo随机模拟的综合交通网络布局评价与决策方法

针对综合交通网络评价指标权重及属性值具有主观性和随机性的特点,提出了基于模拟运算的布局规划方案排序选优的群体随机决策方法。仿真生成满足集结的多个专家对指标重要性偏好排序统计分布的权重,同时考虑交通需求的不确定性对指标值的影响,结合客观熵权计算方案的综合评价值,由多次模拟得到的排序优势度确定方案的优劣差异。根据设计的仿真流程通过算例说明了方法应用的有效性,评价中考虑了主客观因素及随机性特征,可以为网络布局提供科学决策依据。

放疗污染电子来源及去除方法的Monte Carlo模拟研究

利用Monte Carlo程序模拟研究了放射治疗过程中污染电子的产生规律及剂量学特性,并进一步研究充氦及安置铅过滤板两种方法减少污染电子的效果。结果表明:污染电子主要来源于加速器机头和空气的散射,并随射野面积和初级光子束能量的增加而增加;充氦能够有效地减少初级光子束与空气反应产生的污染电子;安置铅过滤板能够有效减少机头部件散射的污染电子;同时使用两种方法后,来源于机头部件与空气的污染电子均有较大程度减少。因此,使用充氦和铅过滤板可以有效减少污染电子造成的皮肤表面剂量,达到较好保护皮肤组织的目的。

垂直电场作用下的钎锌矿相GaN电子输运特性的Monte Carlo研究

在GaN NMOSFET中,沟道电子由于受垂直于其运动方向电场的作用而产生界面散射,从而影响MOSFET特性。研究采用Monte Carlo体模拟方法计算钎锌矿相GaN材料在界面散射下的电子输运特性。模拟中在电子漂移方向加一个水平电场,同时在与其垂直的方向加另外一个电场,在垂直电场作用下,电子发生界面散射。采用基于指数协方差函数的界面粗超度函数计算界面散射率,计算中给定界面粗糙方均根值和相干长度,通过改变垂直电场强度,计算电子平均漂移速度和迁移率特性.在界面粗糙方均根值为0.65nm,相干长度值为1.5nm情况下,当垂直电场大于1×105V/cm时,电子迁移率由于受界面散射的影响开始下降;当垂直电场大于1×106V/cm时,电子迁移率低于200cm2/(V.s)。与直接采用MOS结构研究电子受界面散射的方法相比,此方法排除了MOS结构沟道电场不均匀、非瞬态输运等非理想因素。

New Approach to Simulating the Absorption of Gamma Radiations Using the Monte-Carlo Method: A Computational Study

The following article has been retracted due to the investigation of complaints received against it. Mr. Mohammadali Ghorbani (corresponding author and also the last author) cheated the author’s name: Alireza Heidari. The scientific community takes a very strong view on this matter and we treat all unethical behavior such as plagiarism seriously. This paper published in Vol.3 No.3, 260-265, 2012, has been removed from this site.

Transient Monte Carlo simulation of phonon transport in silicon nanofilms with the local heat source

Accurate prediction of junction temperature is crucial for the efficient thermal design of silicon nano-devices. In nano-scale semiconductor devices, significant ballistic effects occur due to the mean free path of phonons comparable to the heat source size and device scale. We employ a three-dimensional non-gray Monte Carlo simulation to investigate the transient heat conduction of silicon nanofilms with both single and multiple heat sources. The accuracy of the present method is first verified in the ballistic and diffusion limits. When a single local heat source is present, the width of the heat source has a significant impact on heat conduction in the domain. Notably, there is a substantial temperature jump at the boundary when the heat source width is 10 nm.With increasing heat source width, the boundary temperature jump weakens. Furthermore, we observe that the temperature excitation rate is independent of the heat source width, while the temperature influence range expands simultaneously with the increase in heat source width. Around 500 ps, the temperature and heat flux distribution in the domain stabilize. In the case of dual heat sources, the hot zone is broader than that of a single heat source, and the temperature of the hot spot decreases as the heat source spacing increases. However, the mean heat flux remains unaffected. Upon reaching a spacing of 200 nm between the heat sources, the peak temperature in the domain remains unchanged once a steady state is reached. These findings hold significant implications for the thermal design of silicon nano-devices with local heat sources.

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

We demonstrate a two-dimensional（2D） full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations（BTE）.The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also described.As verification and calibration,we have performed a simulation on two types of silicon-germanium（Si-Ge） heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous type.The current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.