The traditional hermetic packaging methods,which require high temperatures and high voltages,would have adverse effects on electronics devices.Based on current-assisted sintering technology,we proposed a new hermetic ...The traditional hermetic packaging methods,which require high temperatures and high voltages,would have adverse effects on electronics devices.Based on current-assisted sintering technology,we proposed a new hermetic packaging method using silver paste.Comparing the microstructure of the joints sintered with different currents,we found that with the increasing sintering current from 4.7 kA to 5.3 kA,the density of the joint increases,which improves the hermeticity and bonding strength of the joints.The results of thermal cycling tests showed that the sealing joints sintered at 4.7 kA with larger porosity are more prone to fail because pores tend to be sources of defects under thermal cycling.After 250 ℃ high thermal storage,there is the coarsening of the pores and the delamination near the Ag/Au interface,degrading the sealing performance of the sintered joint.Besides,the sealing joints sintered at 5.3 kA exhibit superior reliability when exposed to high temperatures.展开更多
The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene(BCB) material. The results show that the bonding temperature is below 250℃, the...The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene(BCB) material. The results show that the bonding temperature is below 250℃, the helium hermetic capability of both silicon-BCB-silicon and silicon-BCB-glass package are better than 6×10~ -4 Pa·cm^3/s. The shear strength is enough for package. The hermeticity is still good after the 15 cycles’ thermal shock test. The relationship between the leakage rate and the distance from the hole to the device border were also discussed with a seepage model.展开更多
基金supported by the National High Technology Research and Development Program of China (No.2016YFB0100602)。
文摘The traditional hermetic packaging methods,which require high temperatures and high voltages,would have adverse effects on electronics devices.Based on current-assisted sintering technology,we proposed a new hermetic packaging method using silver paste.Comparing the microstructure of the joints sintered with different currents,we found that with the increasing sintering current from 4.7 kA to 5.3 kA,the density of the joint increases,which improves the hermeticity and bonding strength of the joints.The results of thermal cycling tests showed that the sealing joints sintered at 4.7 kA with larger porosity are more prone to fail because pores tend to be sources of defects under thermal cycling.After 250 ℃ high thermal storage,there is the coarsening of the pores and the delamination near the Ag/Au interface,degrading the sealing performance of the sintered joint.Besides,the sealing joints sintered at 5.3 kA exhibit superior reliability when exposed to high temperatures.
基金Key Programof Knowledge Innovation Engineering for Chinese Academy of Sciences
文摘The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene(BCB) material. The results show that the bonding temperature is below 250℃, the helium hermetic capability of both silicon-BCB-silicon and silicon-BCB-glass package are better than 6×10~ -4 Pa·cm^3/s. The shear strength is enough for package. The hermeticity is still good after the 15 cycles’ thermal shock test. The relationship between the leakage rate and the distance from the hole to the device border were also discussed with a seepage model.
