Tin phosphides are attractive anode materials for ultrafast lithium-ion batteries(LIBs)because of their ultrahigh Li-ion diffusion capability and large theoretical-specific capacity.However,difficulties in synthesis a...Tin phosphides are attractive anode materials for ultrafast lithium-ion batteries(LIBs)because of their ultrahigh Li-ion diffusion capability and large theoretical-specific capacity.However,difficulties in synthesis and large size enabling electrochemical irreversibility impede their applications.Herein,an in situ catalytic phosphorization strategy is developed to synthesize SnP/CoP hetero-nanocrystals within reduced graphene oxide(rGO)-coated carbon frameworks,in which the SnP relative formation energy is significantly decreased according to density functional theory(DFT)calculations.The optimized hybrids exhibit ultrafast charge/discharge capability(260 mA·h·g^(-1)at 50 A·g^(-1))without capacity fading(645 mA·h·g^(-1)at 2 A·g^(-1))through 1500 cycles.The lithiation/delithiation mechanism is disclosed,showing that the 4.0 nm sized SnP/CoP nanocrystals possess a very high reversibility and that the previously formed metallic Co of CoP at a relatively high potential accelerates the subsequent reaction kinetics of SnP,hence endowing them with ultrafast charge/discharge capability,which is further verified by the relative dynamic current density distributions according to the finite element analysis.展开更多
The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunne...The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(～1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.展开更多
基金supported by the National Natural Science Foundation of China(21975074,21838003,and 91834301)the Social Development Program of Shanghai(17DZ1200900)+1 种基金the Shanghai Scientific and Technological Innovation Project(18JC1410500)the Fundamental Research Funds for the Central Universities(222201718002)。
文摘Tin phosphides are attractive anode materials for ultrafast lithium-ion batteries(LIBs)because of their ultrahigh Li-ion diffusion capability and large theoretical-specific capacity.However,difficulties in synthesis and large size enabling electrochemical irreversibility impede their applications.Herein,an in situ catalytic phosphorization strategy is developed to synthesize SnP/CoP hetero-nanocrystals within reduced graphene oxide(rGO)-coated carbon frameworks,in which the SnP relative formation energy is significantly decreased according to density functional theory(DFT)calculations.The optimized hybrids exhibit ultrafast charge/discharge capability(260 mA·h·g^(-1)at 50 A·g^(-1))without capacity fading(645 mA·h·g^(-1)at 2 A·g^(-1))through 1500 cycles.The lithiation/delithiation mechanism is disclosed,showing that the 4.0 nm sized SnP/CoP nanocrystals possess a very high reversibility and that the previously formed metallic Co of CoP at a relatively high potential accelerates the subsequent reaction kinetics of SnP,hence endowing them with ultrafast charge/discharge capability,which is further verified by the relative dynamic current density distributions according to the finite element analysis.
文摘The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(～1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.
