In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/A1GaN/GaN heterostructure field-effect transistors （HFETs） application. It demonstrated that the surface morphologies, composition,...In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/A1GaN/GaN heterostructure field-effect transistors （HFETs） application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/mr mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0403000)
文摘In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/A1GaN/GaN heterostructure field-effect transistors （HFETs） application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/mr mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.
