Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investi...Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency.The electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in MFSHEMTs.High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state current.The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.展开更多
基金Project supported by Guangxi Science and Technology Planning Project (Grant Nos. AD19245066, AA19254015, AD21220150, and AD18281037)the National Nature Science Foundation of China (Grant Nos. 61874036, 62174041, and 62041403)+4 种基金China Postdoctoral Science Foundation (Grant No. 2020M683626XB)the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant No. 2018GXNSFAA138025)Guangxi Innovation Research Team Project (Grant No. 2018GXNSFGA281004)GUET Excellent Graduate Thesis (Grant No. YXYJRX01)the Fund from the State Key Laboratory of ASIC & System (Grant No. KVH1233021)
文摘Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency.The electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in MFSHEMTs.High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state current.The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.
