The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K ...The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K Blackbody source, the largest photon energies h vp=0.42 eV, 8.9 mW/cm^2） in the range of 80–300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However,it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg（0.78）Cd（0.22）Te. In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.展开更多
基金Project supported by the Natural Science Foundation of Yunnan Province (No. 2008CD176)
文摘The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K Blackbody source, the largest photon energies h vp=0.42 eV, 8.9 mW/cm^2） in the range of 80–300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However,it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg（0.78）Cd（0.22）Te. In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.
