After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military ...After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.展开更多
综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构H...综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.展开更多
文摘After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.
文摘综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.
