Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers.In experiment,X-ray diffraction（XRD） and atomic force microscopy（AFM） have been used to characteri...Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers.In experiment,X-ray diffraction（XRD） and atomic force microscopy（AFM） have been used to characterize the microstructure of HgCdTe films.The experimental results showed that when the growth power increased,the growth rate of HgCdTe films increased;when the growth power was less than 30 W,the HgCdTe film deposited by RF magnetron sputtering was amorphous;when the growth power was more than 30 W,the films exhibited polycrystalline structure.Films deposited at different growth rates were found to have characteristically different formations and surface morphologies;as observed through AFM,the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate.AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.展开更多
针对大面积碲镉汞表面钝化膜的应力问题,基于磁控溅射技术在3 in Ge基碲镉汞表面采用不同工艺条件沉积了ZnS钝化膜,并对其进行了退火处理。利用台阶仪和原子力显微镜(AFM)对ZnS钝化膜的应力及表面形貌进行了表征分析,结果表明:在磁控溅...针对大面积碲镉汞表面钝化膜的应力问题,基于磁控溅射技术在3 in Ge基碲镉汞表面采用不同工艺条件沉积了ZnS钝化膜,并对其进行了退火处理。利用台阶仪和原子力显微镜(AFM)对ZnS钝化膜的应力及表面形貌进行了表征分析,结果表明:在磁控溅射方法中适当提高沉积温度和降低溅射功率,有效降低了ZnS钝化膜应力,平均应力由原来的924 MPa减小到749 MPa,且提高了应力分布均匀性;此外,退火处理有效降低了钝化膜的应力,并改善了ZnS薄膜的晶粒大小一致性和致密度。该研究为减小大尺寸碲镉汞表面钝化膜应力提供了思路。展开更多
基金supported by the National Natural Science Foundation of China(No.60576069).
文摘Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers.In experiment,X-ray diffraction（XRD） and atomic force microscopy（AFM） have been used to characterize the microstructure of HgCdTe films.The experimental results showed that when the growth power increased,the growth rate of HgCdTe films increased;when the growth power was less than 30 W,the HgCdTe film deposited by RF magnetron sputtering was amorphous;when the growth power was more than 30 W,the films exhibited polycrystalline structure.Films deposited at different growth rates were found to have characteristically different formations and surface morphologies;as observed through AFM,the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate.AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.
文摘针对大面积碲镉汞表面钝化膜的应力问题,基于磁控溅射技术在3 in Ge基碲镉汞表面采用不同工艺条件沉积了ZnS钝化膜,并对其进行了退火处理。利用台阶仪和原子力显微镜(AFM)对ZnS钝化膜的应力及表面形貌进行了表征分析,结果表明:在磁控溅射方法中适当提高沉积温度和降低溅射功率,有效降低了ZnS钝化膜应力,平均应力由原来的924 MPa减小到749 MPa,且提高了应力分布均匀性;此外,退火处理有效降低了钝化膜的应力,并改善了ZnS薄膜的晶粒大小一致性和致密度。该研究为减小大尺寸碲镉汞表面钝化膜应力提供了思路。
