Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

Design of a New Water Load for S-band 750 kW Continuous Wave High Power Klystron Used in EAST Tokamak

In order to test the klystrons operated at a frequency of 3.7 GHz in a continuous wave （CW） mode, a type of water load to absorb its power up to 750 kW is presented. The distilled water sealed with an RF ceramic window is used as the absorbent. At a frequency range of 70 MHz, the VSWR （Voltage Standing Wave Ratio） is below 1.2, and the rise in temperature of water is about 30 ℃ at the highest power level.

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the deposition parameters （methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar） could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Thermal Resistance Testing Technology Research of Integration High Power-LED

In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point contact test method. According to the principle that LED forward voltage changes with temperature,LED heat sink to surface temperature distribution is studied directly in the test,and then we analyze the thermal resistance of high-power LED with many integrated chips when its secondary packaging is introduced. This method makes the measurement of thermal resistance of LED more rapid and convenient. It provides an effective assessment method for the analysis of high power LED device design and engineering application.

Fabrication of Tm-Doped Fibers for High Power and 121W Output All-Fiber Tm-Doped Fiber Laser

We fabricate the Tm-doped double cladding silica fiber by using the vapor-solution hybrid-doping method, then build up an all-fiber Tin-doped fiber laser which can provide the output power of up to 121 W, corresponding to a slope efficiency of 51% and an optical-optical efficiency of 48%. By using the domestic Tin-doped fiber, it is the first time a hundred-watt level output at 1915nm has been achieved, to the best of our knowledge. The thermal effect of Tm-doped fiber laser is also analyzed.

Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

Study on the Generation of Ultra-Wideband (UWB) High Power Microwave

The experimental study of ultra-wideband (UWB) technology, its generation and on-line measurement are presented. An experimental repetitive UWB system is designed, manufactured, and tested. High-pressure spark gap switch and its components, as well as oil spark gap switch are studied experimentally on the system. Experimental results indicate that the system operates at a 200 pps repetitive rate with a stable performance. 100 MW peak power UWB pulses are obtained on the system. Fast-time response capacitive divider is designed and fabricated, allowing for an accurate measurement of the high power UWB signal. The main issues related to the design of the switch and the UWB signal online measurement are discussed.

Experimental study of weld position detection based on keyhole infrared image during high power fiber laser welding

Keyhole is one of the important phenomena in high-power laser welding process. By studying the keyhole characteristic and detecting the seam offset during high-power fiber laser welding, an infrared sensitive high-speed camera arranged off-axis orientation of laser beam was applied to capture the dynamic thermal images of a molten pool. The 304 austenitic stainless steel plate butt joint welding experiment with laser power 10 kW was carried out. Through analyzing the keyhole infrared image, the weld position was calculated. Least squares method was used to determine the actual weld position. Image filtering technique was used to process the keyhole image, and the keyhole centroid coordinate were calculated. Also, least squares method was used to fit the keyhole centroid curve equation and establish a nonlinear continuous model which described the deviation between keyhole centroid and weld seam. The heat accumulation effect affected by the infrared radiation was analyzed to determine whether the laser beam focus spot deviated from the desired welding seam. Experimental results showed that the keyhole centroid has related to the seam offset, and can reflect the welding quality.

Development of a Medium Voltage, High Power, High Frequency Four-Port Solid State Transformer

The power and voltage levels of renewable energy resources is growing with the evolution of the power electronics and switching module technologies.For that,the need for the development of a compact and highly efficient solid-state transformer is becoming a critical task in-order to integrate the current AC grid with the new renewable energy systems.The objective of this paper is to present the design,implementation,and testing of a compact multi-port solid-state transformer for microgrid integration applications.The proposed system has a four-port transformer and four converters connected to the ports.The transformer has four windings integrated on a single common core.Thus,it can integrate different renewable energy resources and energy storage systems.Each port has a rated power of 25 kW,and the switching frequency is pushed to 50 k Hz.The ports are chosen to represent a realistic industrial microgrid model consisting of grid,energy storage system,photovoltaic system,and load.The grid port is designed to operate at 4.16 k VAC corresponding to 7.2 kV DC bus voltage,while the other three ports operate at 500 VDC.Moreover,the grid,energy storage and photovoltaic ports are active ports with dual active bridge topologies,while the load port is a passive port with full bridge rectifier one.The proposed design is first validated with simulation results,and then the proposed transformer is implemented and tested.Experimental results show that the designed system is suitable for 4.16 k VAC medium voltage grid integration.

High Power VCSEL Device with Periodic Gain Active Region

High power vertical cavity surface emitting lasers(VCSEKLs) with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structures, a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration were used to improve the beam quality and the heat dissipation. A maximum output power of 1.4 W was demonstrated at CW operation for a 400 μm-diameter device. The lasing wavelength shifted to 995.5 nm with a FWHM of 2 nm at a current of 4.8 A due to the internal heating and the absence of active water cooling. A ring-shape far field pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8 A.

Changes in Rat Testicular Germ Cell Apoptosis after High Power Microwave Radiation

Aim:To study the effect of high power microwave (HPM) radiation on the testicular germ cell apoptosis. Methods: One hundred and twenty-five Spraque-Dawley rats were randomly divided into two groups, the control group and the experimental group and the latter was further divided into four subgroups: 10 mW/cm2 5 min, 10 mW/cm210 min, 20 mw/cm2 5 min and 20 mW/cm210 min. The experimental groups were radiated with S wave band of 10 mW/ cm2,20 mW/cm2 high power microwave for 5 or 10 min. Testicular samples were taken at 6 h, 24 h, 48 h, 72 h and 5 d after radiation. The testicular germ cell apoptosis was detected by in situ terminal deoxynucleotityl transferase mediated dUTP nick end labeling (TUNEL). Results: The number of apoptotic cells of the 6 h, 24 h and 48 h experimental groups after 10 and 20 mW/cm2 radiation for 5 min was significantly larger than that of the controls (P< 0.01), especially after 10 mW/cm2 radiation. The number of the 6 h group reached the peak (161.27±+5.90)/5 convoluted tubules. The changes in the other experimental groups had no significant difference compared with the controls (P>0.05). Conclusion: HPM increases the germ cell apoptosis of rat testis, which is related to the time of radiation and sample acquisition. In the condition of the present test, 5 minutes of HPM radiation may significantly enhance testicular germ cell apoptosis and damage, which in turn may influence the reproductive function of the rats.

High power and high reliability GaN/InGaN flip-chip light-emitting diodes

High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.

Multilevel Current Source Converters for High Power Medium Voltage Applications

In medium voltage high power applications,multi-level current source converters(CSCs)are good candidate to increase system power region,reliability,and the quality of output waveforms.Compared with widely researched voltage source multi-level converters(MLCs),the current source MLCs have the advantages of inherent short-circuit protection,high power capability and high quality of output current waveforms.The main features of MLCs include reduced harmonics,lower switching frequency and reduced current stress on each device which is a particularly important for high power application with low voltage and high current requirements.This paper conducts a general review of the current research about MLCs in higher power medium voltage application.The different types of parallel structure based MLCs and the modulation methodologies will be introduced and compared.Specifically,the circuit analysis of the common-mode(CM)loop for parallel structures will be conducted,the common-mode voltage(CMV)and circulating current suppression methods developed on the base of multilevel modulations will be addressed.

High power external-cavity surface-emitting laser with front and end pump

High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are re- ported. The gain chip consists of 15 repeats of In0.26GaAs/GaAsP0.02 multiple quantum wells and 30 pairs of Alo.2GaAs/Alo.98GaAs distributed Bragg reflectors. The maximum output power of 3 W, optical-to-optical conversion efficiency of 22.4%, and slope efficiency of 29.8% are obtained with 5-℃ heatsink temperature under the front pump, while the maximum output power of 1.1 W, optical-to-optical conversion efficiency of 23.2%, and slope efficiency of 30.8% are reached with 5-℃ heatsink temperature under the end pump. Influences of thermal effects on the output power of the laser with front and end pump are discussed.

Role of Thermal Stresses in Degradation of High Power Laser Diodes

Catastrophic degradation of high power laser diodes is due to the generation of extended defects inside the active parts of the laser structure during the laser operation.The mechanism driving the degradation is strongly related to the existence of localized thermal stresses generated during the laser operation.These thermal stresses can overcome the yield strength of the materials forming the active part of the laser diode.Different factors contribute to reduce the laser power threshold for degradation.Among them the thermal transport across the laser structure constitutes a critical issue for the reliability of the device.

Design and fabrication of triangular inner cladding double-clad ytterbium doped fibre for high power lasers

To improve the performance of double clad high power fibre lasers, inner cladding design plays a significant role. A triangular inner cladding and silica structure second cladding with large air holes go acquire high inner cladding numerical aperture are designed. Single mode and high power output of the fibre lasers need the double clad Yb doped fibre with large core. A fibre with annular refractive index distribution core and low numerical aperture to acquire a large mode area fibre core is designed and fabricated. Furthermore co-doping with aluminium （A1） has been used to improve the solubility of ytterbium （Yb） into silicate network, and the core absorption coefficients of two Yb doped fibres are compared with different A1 concentration experimentally.

Analysis of Starting Performance of High PowerFactor Induction Motor with Floating Windingin Parallel Connection with Capacitors

In this paper, by using a matrix technique, a dynamic model of high power factor induction motor with floating winding in parallel connection with capacitors is established. Then, the starting performance of this motor is analyzed by computer simulation. By comparison of the tested and computed results, which are in good agreement, the dynamic model and simulative method are verified.

High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65.The beam quality factor M;of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing.

20-Hydroxyecdysone Improves Neuronal Differentiation of Adult Hippocampal Neural Stem Cells in High Power Microwave Radiation-Exposed Rats

Objective The hippocampus is thought to be a vulnerable target of microwave exposure.The aim of the present study was to investigate whether 20-hydroxyecdysone(20E)acted as a fate regulator of adult rat hippocampal neural stem cells(NSCs).Furthermore,we investigated if 20E attenuated high power microwave(HMP)radiation-induced learning and memory deficits.Methods Sixty male Sprague-Dawley rats were randomly divided into three groups:normal controls,radiation treated,and radiation+20E treated.Rats in the radiation and radiation+20E treatment groups were exposed to HPM radiation from a microwave emission system.The learning and memory abilities of the rats were assessed using the Morris water maze test.Primary adult rat hippocampal NSCs were isolated in vitro and cultured to evaluate their proliferation and differentiation.In addition,hematoxylin&eosin staining,western blotting,and immunofluorescence were used to detect changes in the rat brain and the proliferation and differentiation of the adult rat hippocampal NSCs after HPM radiation exposure.Results The results showed that 20E induced neuronal differentiation of adult hippocampal NSCs from HPM radiation-exposed rats via the Wnt3a/β-catenin signaling pathway in vitro.Furthermore,20E facilitated neurogenesis in the subgranular zone of the rat brain following HPM radiation exposure.Administration of 20E attenuated learning and memory deficits in HPM radiation-exposed rats and frizzled-related protein(FRZB)reduced the 20E-induced nuclear translocation ofβ-catenin,while FRZB treatment also reversed 20E-induced neuronal differentiation of NSCs in vitro.Conclusion These results suggested that 20E was a fate regulator of adult rat hippocampal NSCs,where it played a role in attenuating HPM radiation-induced learning and memory deficits.