High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper th...High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide（SRPO） method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy（XPS） and atomic force microscopy（AFM） results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.展开更多
文摘High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide（SRPO） method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy（XPS） and atomic force microscopy（AFM） results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.
